Abstract
Generation in a microstrip-resonator-stabilized double-barrier resonant tunneling structure based on GaAs/AlAs heterostructures has been investigated for the first time. The structures fabricated contain near-contact layers (spacers) that prevent impurities from penetrating into the active part of the structure and improve the temporal characteristics of the system. AuNiGe alloy microstrip contacts, which connect the structure with an external rf circuit, were prepared in a planar implementation, making it possible to minimize the RC delay time in the negative differential conductance region by decreasing the series resistance and capacitance of the structure. In structures with spacer layers, the negative differential conductance exhibits a complex behavior due to the influence of the space charge.
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Fiz. Tekh. Poluprovodn. 32, 124–127 (January 1998)
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Beloushkin, A.A., Efimov, Y.A., Ignat’ev, A.S. et al. Generation in a microstrip-resonator-stabilized double-barrier resonant tunneling structure. Semiconductors 32, 112–115 (1998). https://doi.org/10.1134/1.1187365
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DOI: https://doi.org/10.1134/1.1187365