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Photoelectric properties of structures based on TlInS2 single crystals

  • Semiconductors Structures, Interfaces, and Surface
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Abstract

The photovoltaic effect in heterocontacts of various types, viz., In/TlInS2, InSe/TlInS2, and GaSe/TlInS2, is investigated. The relative photoconversion quantum efficiency of these structures is studied as a function of the energy of the incident photons and the polarization plane of linearly polarized light. It follows from photosensitivity measurements that the photosensitive structures obtained can be employed as broad-band and selective photosensors of optical radiation.

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Author information

Authors and Affiliations

  1. Nagaoka University of Technology, Nagaoka, Niigata, 940-21, Japan

    S. Iida & N. Mamedov

  2. St. Petersburg State Technical University, 195251, St. Petersburg, Russia

    V. Yu. Rud’

  3. A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia

    Yu. V. Rud’

Authors
  1. S. Iida
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  2. N. Mamedov
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  3. V. Yu. Rud’
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  4. Yu. V. Rud’
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Fiz. Tekh. Poluprovodn. 32, 78–81 (January 1998)

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Iida, S., Mamedov, N., Rud’, V.Y. et al. Photoelectric properties of structures based on TlInS2 single crystals. Semiconductors 32, 67–70 (1998). https://doi.org/10.1134/1.1187361

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  • DOI: https://doi.org/10.1134/1.1187361

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