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Filling of dislocation levels in strong electric fields

  • Electronic and Optical Properties of Semiconductors
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Abstract

The dependence of the filling factor for occupation of the energy levels of an edge dislocation by electrons on the external electric field is investigated theoretically. An analytical relation is derived for the filling factor. It is established that the dislocation filling factor decreases as the electric field is increased.

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References

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Authors and Affiliations

  1. Yu. G. Mamedaliev Nakhichevan State University of the Azerbaidzhan Republic, 373630, Nakhichevan, Azerbaidzhan

    Z. A. Veliev

Authors
  1. Z. A. Veliev
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Fiz. Tekh. Poluprovodn. 32, 36–37 (January 1998)

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Veliev, Z.A. Filling of dislocation levels in strong electric fields. Semiconductors 32, 29–30 (1998). https://doi.org/10.1134/1.1187354

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  • DOI: https://doi.org/10.1134/1.1187354

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