1. Activation and distribution of silicon implanted in gallium arsenide as a result of isothermal radiation annealing

   • V. M. Ardyshev
   • M. V. Ardyshev

   Atmoic Structure and Non-Electronic Properties of Semiconductors Pages: 1029 - 1032

2. Equilibrium of native point defects in tin dioxide

   • K. P. Bogdanov
   • D. Ts. Dimitrov
   • Yu. M. Tairov

   Atomic Structure and Non-Electronic Properties of Semiconductors Pages: 1033 - 1035

3. Arsenic cluster superlattice in gallium arsenide grown by low-temperature molecular-beam epitaxy

   • V. V. Chaldyshev
   • V. V. Preobrazhenskii
   • P. Werner

   Atomic Structure and Non-Electronic Properties of Semiconductors Pages: 1036 - 1039

4. Photoconductivity of copper-compensated gallium phosphide

   • N. N. Pribylov
   • S. I. Rembeza
   • S. A. Sushkov

   Electronic and Optical Properties of Semiconductors Pages: 1040 - 1043

5. Accumulation of electrons in GaAs layers grown at low temperatures and containing arsenic clusters

   • P. N. Brunkov
   • V. V. Chaldyshev
   • B. R. Semyagin

   Electronic and Optical Properties of Semiconductors Pages: 1044 - 1047

6. Study of GaN thin layers subjected to high-temperature rapid thermal annealing

   • N. I. Katsavets
   • G. M. Laws
   • C. T. Foxon

   Electronic and Optical Properties of Semiconductors Pages: 1048 - 1053

7. Nitrogen divacancies — The possible cause of the “yellow band” in the luminescence spectra of GaN

   • A. É. Yunovich

   Electronic and Optical Properties of Semiconductors Pages: 1054 - 1056

8. A new recombination center in heavily doped GaAs: Zn grown by liquid-phase epitaxy

   • K. S. Zhuravlev
   • T. S. Shamirzaev
   • I. P. Petrenko

   Electronic and Optical Properties of Semiconductors Pages: 1057 - 1061

9. Effect of In doping on the kinetic coefficients in solid solutions of the system Pb_zSn_1−z )_0.95Ge_0.05Te

   • S. A. Nemov
   • V. I. Proshin
   • S. M. Nakhmanson

   Electronic and Optical Properties of Semiconductors Pages: 1062 - 1064

10. Differential methods for determination of deep-level parameters from recombination currents of p-n junctions

    • S. V. Bulyarskii
    • N. S. Grushko
    • A. V. Lakalin

    Electronic and Optical Properties of Semiconductors Pages: 1065 - 1068

11. Experimental corrections for the hot hole distribution function in germanium in crossed electric and magnetic fields

    • V. N. Tulupenko

    Electronic and Optical Properties of Semiconductors Pages: 1069 - 1071

12. Influence of nonuniform spatial distribution of nonequilibrium carriers on the edge emission spectra of direct-gap semiconductors

    • P. G. Lukashevich

    Electronic and Optical Properties of Semiconductors Pages: 1072 - 1074

13. Optoelectronic phenomena in GaAs and GaP layers prepared by nitrogen treatment

    • V. F. Agekyan
    • V. I. Ivanov-Omskii
    • V. Yu. Rud’

    Semiconductor Structures, Interfaces, and Surfaces Pages: 1075 - 1076

14. Photoelectric properties of GaN/GaP heterostructures

    • V. M. Botnaryuk
    • S. D. Raevskii
    • V. Yu. Rud’

    Semiconductor Structures, Interfaces, and Surfaces Pages: 1077 - 1079

15. Photoluminescence of the space charge region of metal-zinc selenide contacts

    • V. P. Makhnii
    • M. M. Sletov

    Semiconductor Structures, Interfaces, and Surfaces Pages: 1080 - 1081

16. The nature of the deep levels responsible for photoelectric memory in GaAs/AlGaAs multilayer quantum-well structures

    • V. N. Ovsyuk
    • M. A. Dem’yanenko
    • A. I. Toropov

    Semiconductor Structures, Interfaces, and Surfaces Pages: 1082 - 1086

17. Weak localization in p-type quantum wells

    • N. S. Averkiev
    • L. E. Golub
    • G. E. Pikus

    Low-Dimensional Systems Pages: 1087 - 1095

18. Capacitance-voltage profiling of Au/n-GaAs Schottky barrier structures containing a layer of self-organized InAs quantum dots

    • P. N. Brunkov
    • A. A. Suvorova
    • P. S. Main

    Low-Dimensional Systems Pages: 1096 - 1100

19. Electron-hole Coulomb interaction in InGaN quantum dots

    • V. E. Bugrov
    • O. V. Konstantinov

    Low-Dimensional Systems Pages: 1101 - 1105

20. Shallow acceptors in strained multiquantum-well Ge/Ge_1−x Si_x heterostructures

    • V. Ya. Aleshkin
    • V. I. Gavrilenko
    • O. A. Kuznetsov

    Low-Dimensional Systems Pages: 1106 - 1110

21. Potential difference and photovoltaic effect arising from distortion of the electron wave function in a GaAs quantum well with a thin AlGaAs barrier

    • Yu. Pozhela
    • K. Pozhela

    Low-Dimensional Systems Pages: 1111 - 1115

22. Effect of partial ordering of a two-dimensional system of scatterers on the anisotropy of its kinetic coefficients

    • N. S. Averkiev
    • A. M. Monakhov
    • P. M. Koenraad

    Low-Dimensional Systems Pages: 1116 - 1118

23. Polarization of in-plane photoluminescence from InAs/Ga(In)As quantum-well layers grown by metallorganic vapor-phase epitaxy

    • V. Ya. Aleshkin
    • B. N. Zvonkov
    • D. O. Filatov

    Low-Dimensional Systems Pages: 1119 - 1124

24. Doping and impurity compensation by ion implantation in a-SiGe films

    • A. V. Ershov
    • A. I. Mashin
    • A. F. Khokhlov

    Amorphous, Glassy, and Porous Semiconductors Pages: 1125 - 1127

25. Long-term structural relaxation and photoinduced degradation in a-Si: H

    • K. V. Kougia
    • A. B. Pevtsov

    Amorphous, Glassy, and Porous Semiconductors Pages: 1128 - 1130

26. Heterogeneity and photoconductivity kinetics in amorphous hydrogenated silicon

    • K. V. Kougia
    • E. I. Terukov
    • V. Fus

    Amorphous, Glassy, and Porous Semiconductors Pages: 1131 - 1133

27. Relaxation of photoinduced metastable states in a-Si:H films deposited at high temperatures

    • I. A. Kurova
    • N. N. Ormont
    • M. M. Kazanin

    Amorphous, Glassy, and Porous Semiconductors Pages: 1134 - 1136

28. Molecular beam epitaxy of alternating-strain ZnSe-based multilayer heterostructures for blue-green lasers

    • S. V. Ivanov
    • A. A. Toropov
    • G. Landwehr

    Physics of Semiconductor Devices Pages: 1137 - 1140