Abstract
Thin interference layers of n-GaN were grown on n-and p-type GaP substrates with (100) and (111) orientations by vapor phase epitaxy in an open chloride system. Photosensitivity spectra of isotypic and anisotypic heterojunctions under linear polarized light from the side of the wideband component (GaN) at oblique incidence were investigated. Induced polarized photosensitivity was observed, and peculiarities of this photosensitivity caused by interference in the GaN layers are discussed.
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S. Nakamura, M. Sench, N. Iwasa, S. Nagahawa, T. Yamada, and T. Mukai, Jpn. J. Appl. Phys. Pt. 2, 34, L1332 (1995).
S. Nakamura, M. Sench, Y. Nagahawa, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoko, and Y. Sugimoto, Appl. Phys. Lett. 68, 3269 (1996).
Y. C. Yeo, T. C. Chong, and M. F. Li, J. Appl. Phys. 83, 1429 (1998).
J. C. Carrano, T. Li, P. A. Grudowski, C. J. Eiting, R. D. Dupuis, and J. C. Campbell, Appl. Phys. Lett. 72, 542 (1998).
S. G. Konnikov, D. Melebaev, V. Yu. Rud’, M. Serginov, S. Tilevov, and Zh. Khanov, Pis’ma Zh. Tekh. Fiz. 18, No. 24, 11 (1992) [Sov. Tech. Phys. Lett. 18, 798 (1992)].
S. G. Konnikov, D. Melebaev, V. Yu. Rud’, A. Berkeliev, M. G. Durdymuradova, and O. V. Kornyakova, Pis’ma Zh. Tekh. Fiz. 19, 57 (1993) [Tech. Phys. Lett. 19, 23 (1993)].
S. G. Konnikov, V. Yu. Rud’, Yu. V. Rud’, D. Melebaev, A. Berkeliev, M. Serginov, and S. Tilevov, Jpn. J. Appl. Phys. 32,Suppl. 32-3, 545 (1993).
F. P. Kesamanli, V. Yu. Rud’, and Yu. V. Rud’, Fiz. Tekh. Poluprovodn. 30, 1921 (1996) [Semiconductors 30, 1001 (1996)].
V. Yu. Rud’, M. Serginov, and S. Tilevov, Pis’ma Zh. Tekh. Fiz. 18, 50 (1992) [Sov. Tech. Phys. Lett. 18, 44 (1992)].
S. G. Konnikov, D. Malebaev, V. Yu. Rud’, and L. M. Fedorov, Pis’ma Zh. Tekh. Fiz. 18, 11 (1992) [Sov. Tech. Phys. Lett. 18, 8 (1992)].
Yu. V. Zhilyaev, N. Nazarov, V. Yu. Rud’, Yu. V. Rud’, and L. M. Fedorov, Fiz. Tekh. Poluprovodn. 27, 1611 (1993) [Semiconductors 27, 1540 (1993)].
A. Berkeliev, Yu. V. Zhilyaev, N. Nazarov, V. Yu. Rud’, and Yu. V. Rud’, Fiz. Tekh. Poluprovodn. 28, 14 (1994) [Semiconductors 28, 8 (1994)].
T. Val’ter, V. Yu. Rud’, Yu. V. Rud’, and G. V. Shok, Fiz. Tekh. Poluprovodn. 31, 806 (1997) [Semiconductors 31, 681 (1997)].
V. M. Botnaryuk, A. V. Koval’, A. V. Simashkevich, D. A. Shcherban, V. Yu. Rud’, and Yu. V. Rud’, Fiz. Tekh. Poluprovodn. 31, 800 (1997) [Semiconductors 31, 677 (1997)].
Selected Topics in Electronics and Systems, Vol. 4, Compound Semiconductor Electronics: The Age of Maturity, edited by M. Shur (World Scientific, 1996).
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Fiz. Tekh. Poluprovodn. 32, 1206–1210 (October 1998)
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Botnaryuk, V.M., Raevskii, S.D., Bel’kov, V.V. et al. Photoelectric properties of GaN/GaP heterostructures. Semiconductors 32, 1077–1079 (1998). https://doi.org/10.1134/1.1187571
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DOI: https://doi.org/10.1134/1.1187571