Abstract
The photoluminescence properties of p-GaAs: Zn (100) layers grown by liquid-phase epitaxy from gallium and bismuth melts at various temperatures have been studied. It is shown that a novel radiative recombination center is formed in these layers. The concentration of the centers increases with the doping level in proportion to the concentration of free holes raised to the power 5.35±0.1. The exponent is independent of the growth melt (gallium or bismuth) and the growth temperature. It is found that the center is a neutral complex consisting of an antisite defect of gallium at an arsenic site and two arsenic vacancies.
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Fiz. Tekh. Poluprovodn. 32, 1184–1189 (October 1998)
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Zhuravlev, K.S., Shamirzaev, T.S., Yakusheva, N.A. et al. A new recombination center in heavily doped GaAs: Zn grown by liquid-phase epitaxy. Semiconductors 32, 1057–1061 (1998). https://doi.org/10.1134/1.1187565
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DOI: https://doi.org/10.1134/1.1187565