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Differential methods for determination of deep-level parameters from recombination currents of p-n junctions

  • Electronic and Optical Properties of Semiconductors
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Abstract

Two techniques for determining the activation energies of centers that create deep levels in the space-charge region (SCR) of p-n junctions are developed on the basis of the Shockley-Read-Hall recombination model. The proposed techniques are based on a consideration of recombination currents in the SCR for a low injection level. The first technique involves a differential analysis of the reduced recombination rate ∂R np(U)/∂U and the second technique involves an analysis of the dependence R 2np (U)/exp(qU/2kT). These techniques are used to analyze the current-voltage characteristics of gold-doped silicon p +-n diodes. The gold-related deep center activation energies obtained from the current-voltage characteristics are in good agreement with the available data in the literature.

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Authors and Affiliations

  1. Ulyanovsk State University, 432700, Ulyanovsk, Russia

    S. V. Bulyarskii, N. S. Grushko & A. V. Lakalin

Authors
  1. S. V. Bulyarskii
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  2. N. S. Grushko
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  3. A. V. Lakalin
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Additional information

Fiz. Tekh. Poluprovodn. 32, 1193–1196 (October 1998)

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Bulyarskii, S.V., Grushko, N.S. & Lakalin, A.V. Differential methods for determination of deep-level parameters from recombination currents of p-n junctions. Semiconductors 32, 1065–1068 (1998). https://doi.org/10.1134/1.1187567

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  • DOI: https://doi.org/10.1134/1.1187567

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