Abstract
We present a theoretical study of the effect from doping of quantum wells (QWs) on enhancement of the mobility in one-side (1S) and two-side (2S) doped square infinite quantum well. Within the variational approach, we introduce the enhancement factor defined by the ratio of the overall mobility in the 2S doped square quantum wells to that in the 1S doped counterpart with the same sheet carrier density and interface profiles. The enhancement is fixed by the sample parameters such as well width and sheet carrier density. We propose two-side doping as an efficient way to upgrade the quality of QWs. Our theory is able to well reproduce the recent experimental data about low-temperature transport of electrons and holes in one-side and two-side doped square QWs.
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Hai, T.T., Hieu, H.K. Mobility of carrier in the single-side and double-side doped square quantum wells. Eur. Phys. J. B 90, 110 (2017). https://doi.org/10.1140/epjb/e2017-80059-x
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DOI: https://doi.org/10.1140/epjb/e2017-80059-x