Abstract
In this paper, we study the nonlinear channel electron mobility μ in an asymmetrically doped double quantum well field-effect transistor (QWFET) structure. The double quantum well consists of V-shaped channels by tailoring the conduction band edge of AlxGa1−xAs alloy through suitable variation of the alloy concentration x. We vary the widths of the wells asymmetrically and analyze their effect on the potential profile which causes drastic changes in the subband electron wave functions (ψn) and energy levels (En). In V-shaped potential, ψn are more localized than that of a square well. The change in the subband electronic structure induces change in occupation of subbands leading to intersubband interactions. We show that oscillatory enhancement in mobility under double subband can be obtained through the ionized impurity scattering through intersubband effects. The typical change of alloy concentration affects the alloy scattering which influences the overall total mobility μ.
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Panda, A.K., Jena, D., Palo, S.K., Sahu, T. (2021). Nonmonotonic Electron Mobility in Asymmetrically Doped V-shaped Coupled Quantum Well Field-Effect Transistor Structure. In: Das, N.R., Sarkar, S. (eds) Computers and Devices for Communication. CODEC 2019. Lecture Notes in Networks and Systems, vol 147. Springer, Singapore. https://doi.org/10.1007/978-981-15-8366-7_59
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DOI: https://doi.org/10.1007/978-981-15-8366-7_59
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