Abstract
Since the first observations metallic behavior in Si-MOSFETs (Silicon-Metal Oxide Semiconductor Field Effect Transistor), the nature of the metal insulator transition in two-dimensional (2D) systems has remained a controversial issue and the temperature coefficient of conductivity (TCC = dσ/dT) can give a false conception on the critical density of the transition from a metallic side to an insulating side (or vice versa). In this paper the density (p) dependence of the conductivity of 2D hole gas confined in gated Si/SiGe/Si quantum wells was analyzed in the metallic side (p ≥ 1.61011 cm−2) at very low temperature. Our investigation reveals a density inhomogeneity driven percolation-type transition and gives values of the critical densities lower than those indicated by the sign of the slope dσ/dT.
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Acknowledgements
We are grateful to Professor M. D’Iorio from « National Research Council of Canada, IMS, Ottawa » to have allowed us to use his experimental results in Si/SiGe Quantum Wells. We are also grateful to the Publications Marketing Coordinator of the APS for granting his permission.
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Dlimi, S., El Kaaouachi, A., Limouny, L. et al. Percolation Induced Metal–Insulator Transition in 2D Si/SiGe Quantum Wells. Trans. Electr. Electron. Mater. 23, 457–461 (2022). https://doi.org/10.1007/s42341-021-00364-7
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DOI: https://doi.org/10.1007/s42341-021-00364-7