Abstract.
A recipe to design quantum devices that exhibit the theoretical pseudo-Gaussian oscillator electronic states properties is given. The algorithm is described en detail and is illustrated by the computation of a Mn x Cd1- x Te ternary alloy pseudo-Gaussian heterostructure. The numerical procedure reaches beyond of pseudo-Gaussian models and can be used for designing epitaxial growth devices with desired electronic states structure. The calculations are carried out in the envelope function and effective mass approximations.
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Paulescu, M., Tulcan-Paulescu, E. & Gravila, P. PGO models in the envelope function and effective mass approximations. Eur. Phys. J. B 80, 115–120 (2011). https://doi.org/10.1140/epjb/e2011-10885-7
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DOI: https://doi.org/10.1140/epjb/e2011-10885-7