Abstract
Using ensemble Monte Carlo simulation technique, we have calculated the transport properties of InN such as the drift velocity, the drift mobility, the average electron, energy relaxation times and momentum relaxation times at high electric field. The scattering mechanisms included scattering mechanisms are polar optical phonon, ionized impurity, acoustic phonon and intervalley phonon. It is found that the maximum peak velocity only occurs when the electric field is increased to a value above a certain critical field. This critical field is strongly dependent on InN parameters. The steady-state transport parameters are in fair agreement with other recent calculations.
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References
H Morkoç, Nitride semiconductors and devices (Springer, New York, 1999)
V Y Davydov et al, Phys. Status Solidi B230, R4 (2002)
J Wu et al, Appl. Phys. Lett. 80, 3967 (2002)
J Wu et al, Phys. Rev. B66, 201403 (2002)
T Matsuoka, H Okamoto, M Nakao, H Harima and E Kurimoto, Appl. Phys. Lett. 81, 1246 (2002)
T Inushima, V Mamutin, V Vekshin, S Ivanov, T Sakon, M Motokawa and S Ohoya, J. Crystal Growth 227/228, 481 (2001)
T Tansley and C Foley, J. Appl. Phys. 59, 3241 (1986)
Semiconductors: Data handbook edited by O Madelung (Springer, Berlin, 2004)
S K O’Leary, B E Foutz, M S Shur, U V Bhapkar and L F Eastman, J. Appl. Phys. 83, 826 (1998)
E Bellotti, B K Doshi, K F Brennan, J D Albrecht and P P Ruden, J. Appl. Phys. 85, 916 (1999)
B E Foutz, S K O’Leary, M S Shur and L F Eastman, J. Appl. Phys. 85, 7727 (1999)
C Bulutay and B K Ridley, Superlattices Microstruct. 36, 465 (2004)
V M Polyakov, F Schwierz, D Fritsch and H Schmidt, Phys. Status Solidi C3, 598 (2006)
V M Polyakova and F Schwierz, J. Appl. Phys. Lett. 88, 032101 (2006)
V M Polyakova and F Schwierz, J. Appl. Phys. 99, 113705 (2006)
D Fritsch, H Schmidt and M Grundmann, Phys. Rev. B69, 165204 (2004)
W Fawcett, A D Boardman and S Swain, J. Phys. Chem. Sol. 31, 1963 (1970)
C Jacoboni and L Reggiani, Rev. Mod. Phys. 55(3), 645 (1983)
The Monte Carlo method for semiconductor device simulation edited by Carlo Jacoboni and Paolo Lugli (Springer-Verlag/Wien, 1989)
F M Abou El-Ela, Monte Carlo study of transport in GaAs, Ph.D. Thesis (Essex University, England, 1989)
H Brooks and C Herring, Phys. Rev. 83, 879 (1951)
E Conwell and V P Weisskopf, Phys. Rev. 77, 388 (1950)
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EL-ELA, F.M.A., EL-ASSY, B.M. Electron transport in wurtzite InN. Pramana - J Phys 79, 125–136 (2012). https://doi.org/10.1007/s12043-012-0294-5
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DOI: https://doi.org/10.1007/s12043-012-0294-5