Nitrogen implantation into GaP: Damage and nitrogen location studies D. A. ThompsonS. S. JoharJ. Shewchun OriginalPaper Pages: 195 - 207
Electrical properties and luminescence of CuInSe2 P. MiglioratoJ. L. ShayH. M. Kasper OriginalPaper Pages: 209 - 222
Faraday rotation, optical isolation and modulation at 10.6 μm using hot-pressed CdCr2S4 and CoCr2S4 S. D. Jacobs OriginalPaper Pages: 223 - 241
The EFG process applied to the growth of silicon ribbons* J. C. SwartzT. SurekB. Chalmerst OriginalPaper Pages: 255 - 279
The carrier lifetime of heat-treated silicon crystals K. GraffH. Pieper OriginalPaper Pages: 281 - 298
Pb1-xSnxTe epitaxial layers prepared by the hot-wall technique I. KasaiJ. HornungJ. Baars OriginalPaper Pages: 299 - 311
Silicon epitaxial growth using dichlorosilane P. H. RobinsonN. Goldsmith OriginalPaper Pages: 313 - 328
Sem, auger spectroscopy and ion backscattering techniques applied to analyses of Au/refractory metallizations A. ChristouL. JarvisJ. K. Hirvonen OriginalPaper Pages: 329 - 345
Infrared transmission in GE-SB-SE glasses M. D. RechtinA. R. HiltonD. J. Hayes OriginalPaper Pages: 347 - 362
Growth and properties of VPE GaP for green LEDs G. B. StringfellowM. E. WeinerR. A. Burmeister OriginalPaper Pages: 363 - 387
Liquid encapsulated czochralski pulling of InP crystals K. J. BachmannE. BuehlerA. R. Strnad OriginalPaper Pages: 389 - 406
