Model development of GaN MOVPE growth chemistry for reactor design Jingxi SunJ. M. RedwingT. F. Kuech Special Issue Paper Pages: 2 - 9
InGaN/GaN quantum well growth on pyramids of epitaxial lateral overgrown GaN X. ZhangP. D. DapkusN. P. Kobayashi Special Issue Paper Pages: 10 - 14
SIMS investigations into the effect of growth conditions on residual impurity and silicon incorporation in GaN and AlxGa1−xN G. ParishS. KellerU. K. Mishra Special Issue Paper Pages: 15 - 20
The influence of OMVPE growth pressure on the morphology, compensation, and doping of GaN and related alloys A. E. WickendenD. D. KoleskeW. J. Moore Special Issue Paper Pages: 21 - 26
The hall mobility and its relationship with persistent photoconductivity of undoped GaN W. WangS. J. ChuaG. Li Special Issue Paper Pages: 27 - 30
Characterization of undoped and silicon-doped InGaN/GaN single quantum wells B. SchinellerP. H. LimK. Heime Special Issue Paper Pages: 31 - 36
Migration effect on semiconductor surface for narrow-stripe selective MOVPE Y. SakataK. Komatsu Special Issue Paper Pages: 37 - 41
MOVPE grown Ga1−xInxAs solar cells for GaInP/GaInAs tandem applications F. DimrothP. LanyiA. W. Bett Special Issue Paper Pages: 42 - 46
High C-doping of MOVPE grown thin AlxGa1−xAs layers for AlGaAs/GaAs interband tunneling devices F. DimrothU. SchubertA. W. Bett Special Issue Paper Pages: 47 - 52
Optimization of GaAsP/AlGaAs-based QW laser structures for high power 800 nm operation A. KnauerF. BuggeM. Weyers Special Issue Paper Pages: 53 - 56
MOVPE growth of AlGaAs/GaInP diode lasers F. BuggeA. KnauerM. Weyers Special Issue Paper Pages: 57 - 61
Impact of growth rate on the quality of ZNS-MQW InGaAsP/InP laser structures grown by LP-MOVPE Wilson De Carvalho Jr.Mario Tosi FurtadoMônica Alonso Cotta Special Issue Paper Pages: 62 - 68
Ultraviolet detectors based on epitaxial ZnO films grown by MOCVD Y. LiuC. R. GorlaM. Wraback Special Issue Paper Pages: 69 - 74
Optimization of emitter cap growth conditions for InGaP/GaAs HBTs with high current gain by LP-MOCVD Q. YangD. ScottG. E. Stillman Special Issue Paper Pages: 75 - 79
(Al)GaInP multiquantum well LEDs on GaAs and Ge P. ModakM. D’HondtP. Demeester Special Issue Paper Pages: 80 - 85
A micromachined, shadow-mask technology for the OMVPE fabrication of integrated optical structures G. M. PeakeL. ZhangS. D. Hersee Special Issue Paper Pages: 86 - 90
Exploring new active regions for type I InAsSb strained-layer lasers R. M. BiefeldJ. D. PhillipsS. R. Kurtz Special Issue Paper Pages: 91 - 93
MOVPE growth of (Al, Ga)InP-based laser structures monitored by real-time reflectance anisotropy spectroscopy K. HaberlandA. BhattacharyaW. Richter Special Issue Paper Pages: 94 - 98
GaAs high temperature optical constants and application to optical monitoring within the MOVPE environment D. A. AllwoodP. C. KlipsteinP. J. Walker Special Issue Paper Pages: 99 - 105
Real-time optical techniques and QMS to characterize growth in a modified commercial OMVPE reactor K. A. BellM. EbertD. E. Aspnes Special Issue Paper Pages: 106 - 111
Step structure of GaInAsSb grown by organometallic vapor phase epitaxy C. A. Wang Special Issue Paper Pages: 112 - 117
Effects of substrate orientation and surface reconstruction on patterned substrate OMVPE of GaAs W. ReichertR. M. Cohen Special Issue Paper Pages: 118 - 128
Effect of MOVPE growth interruptions on the gallium arsenide interior interface morphology Georg BernatzSiegfried NauWolfgang Stolz Special Issue Paper Pages: 129 - 133
Surfactant effects of dopants on ordering in GaInP G. B. StringfellowR. T. LeeT. Y. Seong Special Issue Paper Pages: 134 - 139
Selective incorporation of Si along step edges during delta-doping on MOVPE-grown GaAs (001) vicinal surfaces Junichi MotohisaChiharu TazakiTakashi Fukui Special Issue Paper Pages: 140 - 145
A comparison of TMG with TEG for the growth of InxGa1−xAs Richard William GlewKaren Grim-BogdanShohei Nakahara Special Issue Paper Pages: 146 - 150
Next generation adduct purification techniques for low oxygen content metal alkyls K. M. CowardA. C. JonesT. Martin Special Issue Paper Pages: 151 - 155
Properties of solution TMI as an OMVPE source M. S. RavetzL. M. SmithR. T. Blunt Special Issue Paper Pages: 156 - 160
1,1-Dimethylhydrazine as a high purity nitrogen source for MOVPE-water reduction and quantification using nuclear magnetic resonance, gas chromatography-atomic emission detection spectroscopy and cryogenic-mass spectroscopy analytical techniques R. OdedraL. M. SmithJ. Cheng Special Issue Paper Pages: 161 - 164
Optical characterization of (GaIn)(NAs)/GaAs MQW structures J. KochF. HöhnsdorfW. Stolz Special Issue Paper Pages: 165 - 168
In-situ post annealing treatment of nitrogen-doped ZnSe grown using photo-assisted MOVPE M. U. AhmedS. J. C. Irvine Special Issue Paper Pages: 169 - 172
Growth and photoluminescence study of ZnSe quantum dots Y. H. ChangM. H. ChiengY. F. Chen Special Issue Paper Pages: 173 - 176
Thermoelectric quantum-dot superlattices with high ZT T. C. HarmanP. J. TaylorM. P. Walsh Letter Pages: L1 - L2