Prospects of uncooled HgCdTe detector technology W. E. TennantS. CabelliK. Spariosu Special Issue Paper Pages: 582 - 588
MOVPE growth of HgCdTe for high performance 3–5 µm photodiodes operating at 100–180K P. MitraF. C. CaseP. W. Norton Special Issue Paper Pages: 589 - 595
Advances in composition control for 16 µm LPE P-on-n HgCdTe heterojunction photodiodes for remote sensing applications at 60K S. P. TobinM. H. WeilerP. W. Norton Special Issue Paper Pages: 596 - 602
Junction depth measurement in HgCdTe using laser beam induced current (LBIC) C. A. MuscaD. A. RedfernJ. Bajaj Special Issue Paper Pages: 603 - 610
Excess low frequency noise/I-V studies in p-on-n MBE LWIR Hg1−xCdxTe detectors A. I. D’SouzaP. S. WijewarnasuriyaJ. M. Arias Special Issue Paper Pages: 611 - 616
Analysis of crosstalk in HgCdTe p-on-n heterojunction photovoltaic infrared sensing arrays C. A. MuscaJ. M. DellC. Bruce Special Issue Paper Pages: 617 - 623
Improved operability in Hg1−xCdxTe detector arrays M. A. HutchinsF. T. J. SmithP. W. Norton Special Issue Paper Pages: 624 - 629
Performance limitation of short wavelength infrared InGaAs and HgCdTe photodiodes Antoni RogalskiRobert Ciupa Special Issue Paper Pages: 630 - 636
Low temperature thermal annealing effects in bulk and epitaxial CdxHg1−xTe P. CapperC. D. MaxeyD. Shaw Special Issue Paper Pages: 637 - 648
Microscopic defects on MBE grown LWIR Hg1−xCdxTe material and their impact on device performance P. S. WijewarnasuriyaM. ZandianA. I. D’Souza Special Issue Paper Pages: 649 - 653
The effects of short-range order and natural microinhomogeneities on the FIR optical properties of CdxHg1−xTe M. I. VasilevskiyA. I. BelogorokhovM. J. M. Gomes Special Issue Paper Pages: 654 - 661
New developments in the heteroepitaxial growth of Be-chalcogenides based semiconducting alloys C. ChauvetV. BousquetJ. P. Faurie Special Issue Paper Pages: 662 - 665
Study of CdSSe:V and CdMnTe:V photorefractive effect K. ChattopadhyayK. M. PourA. Burger Special Issue Paper Pages: 666 - 669
VUV-ellipsometry on BexZn1−xSe and BeTe K. WilmersT. WethkampM. Cardona Special Issue Paper Pages: 670 - 677
Absorption and photoluminescence spectroscopy of diffusion-doped ZnSe:Cr2+ C. I. RablauJ. -O. NdapN. C. Giles Special Issue Paper Pages: 678 - 682
Analysis of CZT crystals and detectors grown in russia and the ukraine by high-pressure bridgman methods H. HermonM. SchieberH. Yoon Special Issue Paper Pages: 688 - 694
Hydrogen transport vapor phase epitaxy of CdTe on hybrid substrates for x-ray detector applications N. LovergineP. PreteA. M. Mancini Special Issue Paper Pages: 695 - 699
Development of dry processing techniques for CdZnTe surface passivation M. J. MescherT. E. SchlesingerR. B. James Special Issue Paper Pages: 700 - 704
MBE growth of HgCdTe on silicon substrates for large-area infrared focal plane arrays: A review of recent progress T. J. de LyonJ. E. JensenG. M. Venzor Special Issue Paper Pages: 705 - 711
Insights into MOCVD process control as revealed by laser interferometry A. StaffordS. J. C. IrvineJ. Bajaj Special Issue Paper Pages: 712 - 717
CdZnTe substrate producibility and its impact on IRFPA yield Sanghamitra SenHerbert L. HettichEugene O. McLean Special Issue Paper Pages: 718 - 725
Cadmium zinc telluride substrate growth, characterization, and evaluation M. KestigianA. B. BollongH. Wadley Special Issue Paper Pages: 726 - 731
Microstructural development of directionally solidified Hg1−xZnxSe alloys S. D. CobbF. R. SzofranS. L. Lehoczky Special Issue Paper Pages: 732 - 739
Initial evaluation of a valved Te source for MBE growth of HgCdTe D. D. EdwallD. B. YoungScott Priddy Special Issue Paper Pages: 740 - 742
In-Situ monitoring of temperature and alloy composition of Hg1−xCdxTe using FTIR spectroscopic techniques M. DaraseliaC. H. GreinH. D. Shih Special Issue Paper Pages: 743 - 748
Integrated multi-sensor system for real-time monitoring and control of HgCdTe MBE G. L. OlsonJ. A. RothB. Johs Special Issue Paper Pages: 749 - 755
Effect of incident angle in spectral ellipsometry on composition control during molecular beam epitaxial growth of HgCdTe F. AqaridenW. M. DuncanM. J. Bevan Special Issue Paper Pages: 756 - 759
Optical properties of Cd0.9Zn0.1 Te studied by variable angle spectroscopic ellipsometry between 0.75 and 6.24 eV H. W. YaoJ. C. EricksonH. Hermon Special Issue Paper Pages: 760 - 765
Compensation and trapping in CdZnTe radiation detectors studied by thermoelectric emission spectroscopy, thermally stimulated conductivity, and current-voltage measurements E. Y. LeeR. B. JamesH. Hermon Special Issue Paper Pages: 766 - 773
Laser ablation sampling for induction coupled plasma source quadrupole mass spectrometry of Cd-Zn-Te materials Colin HackettHaim HermonRalph James Special Issue Paper Pages: 774 - 784
Effect of compositional disorder on the optical properties of Cd1−xZnxTe K. SuzukiS. SetoJ. Gutowski Special Issue Paper Pages: 785 - 788
Arsenic incorporation in MBE grown Hg1−xCdxTe C. H. GreinJ. W. GarlandM. Fuchs Special Issue Paper Pages: 789 - 792
New techniques in SIMS analysis of HgCdTe materials Larry WangLily H. ZhangJun Li Special Issue Paper Pages: 793 - 798
Arsenic incorporation during MBE growth of HgCdTe M. A. BerdingA. Sher Special Issue Paper Pages: 799 - 803
Can studies of the II-VIs profit from the use of synchrotron radiation and the DOE financial support thereof? William E. SpicerAlberto Herrera-GômezPiero Pianetta Special Issue Paper Pages: 804 - 809
X-ray photoelectron spectroscopy study of oxide and Te overlayers on as-grown and etched HgCdTe L. S. HirschR. HaakenaasenT. H. Myers Special Issue Paper Pages: 810 - 816
Use of electron cyclotron resonance plasmas to prepare CdZnTe (211)B substrates for HgCdTe molecular beam epitaxy J. N. JohnsonL. A. AlmeidaJ. H. Dinan Special Issue Paper Pages: 817 - 820
Optimization of dry etch process conditions for HgCdTe detector arrays Peter O’DetteGary TarnowskiPaul Lovecchio Special Issue Paper Pages: 821 - 825
Valence band offset in HgTe/Hg1−xCdxTe superlattices C. R. BeckerV. LatussekG. Landwehr Special Issue Paper Pages: 826 - 829
Surface second harmonic generation in the characterization of anodic sulphide and oxide films on Hg1−xCdxTe (MCT) L. E. A. BerlouisA. W. WarkP. F. Brevet Special Issue Paper Pages: 830 - 837
Resistivity variation of semi-insulating Cd1−xZnx Te in relationship to alloy composition H. YoonM. S. GoorskyR. B. James Special Issue Paper Pages: 838 - 842
Effect of electron transport properties on unipolar CdZnTe radiation detectors: LUND, spectrumplus and coplanar grid E. Y. LeeR. B. James Special Issue Paper Pages: 843 - 849
Interrelations between defects in the Hg1−xCdxTe epilayers and their measured lattice parameters and composition N. MainzerE. LakinE. Zolotoyabko Special Issue Paper Pages: 850 - 853
Dependency of p-n junction depth on ion species implanted in HgCdTe H. EbeM. TanakaY. Miyamoto Special Issue Paper Pages: 854 - 857
Improvement of nonlinearity and extension of wavelength region using tandem (PV+PC) type HgCdTe detector (Dual-MCT) in FTIR spectrometer O. AbeK. KawasakiM. Wakaki Special Issue Paper Pages: 858 - 863
Large volume imaging arrays for gamma-ray spectroscopy T. E. SchlesingerB. BrunettA. Tsigelman Special Issue Paper Pages: 864 - 868