Influence of arsenic vapor pressure during copper diffusion on deep level formation in silicon-doped gallium arsenide Lucy M. ThomasVishnu K. Lakdawala Regular Issue Paper Pages: 341 - 346
Effects of nitrogen trifluoride on the growth and properties of plasma-enhanced chemical-vapor-deposited diamond-like carbon films S. S. AngG. SreenivasR. K. Ulrich Regular Issue Paper Pages: 347 - 352
Meltback etching and regrowth of GaAs/AlGaAs in liquid phase epitaxy for fabrication of microlens Gyu-Seog ChoSung-Ho HahmYoung-Se Kwon Regular Issue Paper Pages: 353 - 359
Simultaneous impurity doping with Zn and Se in AlGaInP by MOVPE C. AnayamaH. SekiguchiT. Tanahashi Regular Issue Paper Pages: 361 - 364
Passivation of Hg1−xCdxTe by photochemical native oxidation: Growth characteristics G. H. WintonK. PrasadM. A. C. Hotchkis Regular Issue Paper Pages: 365 - 373
Characterization of selective reactive ion etching effects on delta-doped GaAs/AlGaAs MODFET layers S. AgarwalaM. TongI. Adesida Regular Issue Paper Pages: 375 - 381
Role of a nucleation layer in suppressing interfacial pitting in A. K. BallalL. Salamanca-RibaB. K. Fuller Regular Issue Paper Pages: 383 - 389
Electrical characterization of semiconducting diamond thin films and single crystals J. A. Von WindheimV. VenkatesanK. Das Regular Issue Paper Pages: 391 - 398
Photoluminescence characterization of UHV/CVD grown multi-quantum well structures R. MisraD. W. GreveT. E. Schlesinger Regular Issue Paper Pages: 399 - 402
Trapping and recombination processes via deep level T3 in semi-insulating gallium arsenide U. V. DesnicaB. ŠantićM. Pavlović Regular Issue Paper Pages: 403 - 407
Solid boron and antimony doping of Si and SiGe grown by gas source molecular beam epitaxy S. H. LiP. K. BhattacharyaE. Gulari Regular Issue Paper Pages: 409 - 412
Yellow electroluminescent diodes utilizing poly(2,5-bis(cholestanoxy)-1,4-phenylene vinylene) C. ZhangS. HögerA. J. Heeger Regular Issue Paper Pages: 413 - 417
Transformation process of laser ablated PZT thin films Hongxue ZhangHannu MoilanenRisto Rautioaho Regular Issue Paper Pages: 419 - 422
Interface strain in organometallic vapor phase epitaxy grown InGaAs/InP superlattices A. R. ClawsonX. JiangP. K. L. Yu Erratum Pages: 423 - 428