An overview of early studies on persistent photoconductivity and other properties of deep levels in GaAsP: The effect of deep levels on light emitting devices M. George CrafordG. E. StillmanJ. A. Rossi OriginalPaper Pages: 3 - 12
Confirmation of large lattice relaxation of theDX center by extended photo-ionization cross-section measurements G. A. NorthropP. M. Mooney OriginalPaper Pages: 13 - 22
Effect of local alloy disorder on the emission kinetics of deep donors (DX centers) in AlxGa1-xAs P. M. MooneyT. N. TheisE. Calleja OriginalPaper Pages: 23 - 33
Bistability of theDX center in GaAs and AlxGa1-xAs, and experimental tests for negativeU of theDX level T. N. TheisP. M. MooneyB. D. Parker OriginalPaper Pages: 35 - 48
Electron paramagnetic resonance and optically-detected magnetic resonance of donors in AlxGa1-xAs T. A. KennedyE. Glaser OriginalPaper Pages: 49 - 54
Magnetic properties of donors in GaAsP K. KhachaturyanE. R. WeberG. E. Stillman OriginalPaper Pages: 59 - 62
Shallow impurities in quantum-well structures: A far infrared view Y. J. WangJ. -P. ChengB. D. McCombe OriginalPaper Pages: 71 - 78
Investigation of residual impurity content in GaAs layers grown by VPE under very low pressure conditions J. CamasselJ. P. LaurentiK. Grüter OriginalPaper Pages: 79 - 90
Growth of epitaxial Si1-xGex layers at 750° C by VLPCVD S. M. JangC. TsaiR. Reif OriginalPaper Pages: 91 - 95
Use of tertiarybutylphosphine for OMVPE growth of (AlxGa1-x)o.51 In0.49P D. S. CaoG. B. Stringfellow OriginalPaper Pages: 97 - 101
Stress in “cathodic” plasma oxides as a function of processing parameters W. DauksherA. Reisman OriginalPaper Pages: 103 - 112
Very high purity In0.53Ga0.47As grown by molecular beam epitaxy T. MishimaM. TakahamaS. Takahashi OriginalPaper Pages: 113 - 116