Dislocation configurations in Si/SixGe1-x strained layer heterostructures Krishna Rajan OriginalPaper Pages: 1009 - 1013
Oxygen and carbon incorporation in low temperature epitaxial Si films grown by rapid thermal chemical vapor deposition (RTCVD) M. L. GreenD. BrasenH. Temkin OriginalPaper Pages: 1015 - 1019
NMOSFET characteristics on a double hetero-epitaxial Si/γ-Al2O3/Si structure fabricated by a new MBE growth method H. HanafusaH. Ogata OriginalPaper Pages: 1021 - 1025
Very low defect remote hydrogen plasma clean of Si (100) for homoepitaxy B. AnthonyT. HsuA. Tasch OriginalPaper Pages: 1027 - 1032
The influence of defects on device performance of MBE-grown Si homojunction and strained Si1-xGex/Si heterostructures D. X. XuG. D. ShenG. V. Hansson OriginalPaper Pages: 1033 - 1041
Defect microstructure in single crystal silicon thin films grown at 150° C-305° C by remote plasma-enhanced chemical vapor deposition T. HsuB. AnthonyW. Harrington OriginalPaper Pages: 1043 - 1050
In situ temperature measurement by infrared absorption for low-temperature epitaxial growth of homo- and hetero-epitaxial layers on silicon J. C. SturmP. V. SchwartzP. M. Garone OriginalPaper Pages: 1051 - 1054
Silicon molecular beam epitaxy: Highlights of recent work John C. Bean OriginalPaper Pages: 1055 - 1059
Low thermal budget solid phase epitaxial growth of CaF2 on Si (111) substrates R. SinghR. P. S. ThakurA. B. Swartzlander OriginalPaper Pages: 1061 - 1064
Low temperature, defect-free silicon epitaxy using a low kinetic energy particle process Tadashi ShibataTadahiro Ohmi OriginalPaper Pages: 1065 - 1073
Reduced pressure and temperature epitaxial silicon CVD kinetics and applications J. L. RegoliniD. BensahelJ. Mercier OriginalPaper Pages: 1075 - 1081
Heavily P-doped (≥1021 cm-3) Si and SiGe films grown by photo-CVD at 250° C A. YamadaY. JiaK. Takahashi OriginalPaper Pages: 1083 - 1087
Remote plasma-enhanced CVD of silicon: Reaction kinetics as a function of growth parameters B. AnthonyT. HsuA. Tasch OriginalPaper Pages: 1089 - 1094
The kinetics of dislocation glide in SiGe alloy layers C. G. TuppenC. J. Gibbings OriginalPaper Pages: 1101 - 1106
In situ STM characterisation of epitaxial layers in a 3-inch MBE system R. ButzH. Wagner OriginalPaper Pages: 1107 - 1110
Three dimensional devices fabricated by silicon epitaxial lateral overgrowth G. W. NeudeckP. J. SchubertJ. P. Denton OriginalPaper Pages: 1111 - 1117
Delta doping superlattices in silicon H. P. ZeindlE. HammerlI. Eisele OriginalPaper Pages: 1119 - 1122
Selective silicon epitaxial growth on a submicrometer WSi2 grating: Application to the permeable base transistor P. A. BadozD. BensahelJ. L. Regolini OriginalPaper Pages: 1123 - 1127
Rapid thermal chemical vapor deposition of germanium on silicon and silicon dioxide and new applications of ge in ULSI technologies M. C. ÖztürkD. T. GriderP. Russell OriginalPaper Pages: 1129 - 1134
Grain growth mechanism in boron doped polycrystalline silicon S. KalainathanR. DhanasekaranP. Ramasamy OriginalPaper Pages: 1135 - 1139
Selective area growth of GaAs with semiconductor-metal-semiconductor structures using pulsed-mode operation of MOCVD Chang-Hee HongChang-Tae KimYoung-Se Kwon OriginalPaper Pages: 1141 - 1144
Shallow, small area, TiSi2 contacts to n+ and p+ silicon A. H. PereraJ. P. Krusius OriginalPaper Pages: 1145 - 1149