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Shallow, small area, TiSi2 contacts to n+ and p+ silicon

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Abstract

Shallown + andp + doped source/drain contacts to silicon as small as 300 × 200 nm have been fabricated using an optimized silicided (TiSi2) contact technology. Well behaved structural and electrical characteristics were found. The electrical series resistance through two of such contacts from metal to metal through the semiconductor contacts increases rapidly for contact sizes below the transfer length of the contact (about 0.5 μm). This resistance increase is critically dependent on the contact resistivity and three-dimensional current flow patterns.

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Authors and Affiliations

  1. School of Electrical Engineering and National Nanofabrication Facility, Cornell University, 14853, Ithaca, New York

    A. H. Perera & J. P. Krusius

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  1. A. H. Perera
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  2. J. P. Krusius
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Perera, A.H., Krusius, J.P. Shallow, small area, TiSi2 contacts to n+ and p+ silicon. J. Electron. Mater. 19, 1145–1149 (1990). https://doi.org/10.1007/BF02651996

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  • DOI: https://doi.org/10.1007/BF02651996

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