Abstract
The mechanism of grain growth in heavily boron doped polycrystalline silicon has been studied for various boron concentrations, annealing times and annealing temperatures by proposing a kinetic model based on thermodynamical concepts. A computer simulation technique has been used to determine the grain boundary self-diffusion of silicon atoms. Our theoretical predictions have been compared with available experimental reports. This model has been extended to evaluate the grain size distribution in boron doped polysilicon for various dopant concentrations, annealing times and temperatures. The results are discussed in detail.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
J. Y. W. Seto, J. Appl. Phys.46, 5247 (1975).
G. Baccarani, B. Ricco and G. Spakini, J. Appl. Phys.49, 5565 (1978).
H. Gleiter, Acta. Metall.17, 853 (1969).
D. Turnbull, Trans. Am. Inst. Min. Metall. Eng.191, 3 (1951).
D. G. Cole, P. Feltham and E. Gilliam, Proc. R. Soc.67, 131 (1954).
K. Lucke, G. Masing and P. Noiting, Z. Metallkd.15, 64 (1956).
K. Detert and K. Lücke ‘Influence of defined small Amounts of Impurities on the recrystallization of Aluminium. Brown University. #AFOS R-TN-56-103; AD-82016-March, 1956.
Y. Wada and S. Nishimatsu, J. Electrochem. Soc.125, 1499 (1978).
L. Mei, M. River, Y. Kwart and R. W. Dutton, J. Electrochem. Soc.129, 1791 (1982).
C. V. Thomson and H. I. Smith, Appl. Phys. Lett.44, 603 (1984).
L. Mei, M. River, Y. Kwart and R. W. Dutton, eds. H. R. Huff, R. J. Kriegler and Y. Takeishi, Semiconductor Silicon (1981), Electrochem. Soc., p. 1007.
C. V. Thomson, J. Appl. Phys.58, 763 (1985).
S. Kalainathan, R. Dhanasekaran and P. Ramasamy, Thin Solid Films163, 383 (1988).
S. Kalainathan, R. Dhanasekaran and P. Ramasamy, J. Cryst. Growth (in press).
M. Hillert, Acta. Metall.13, 227 (1965).
D. J. Srolovitz, M. P. Anderson, G. S. Grest and P. S. Sahni, Acta. Metall.32, 1429 (1984).
O. Hunderi and N. Ryum. Acta. Metall.27, 161 (1979).
S. Sahni, D. J. Srolovitz, G. S. Grest, M. P. Anderson and S. A. Safran, Phys. Rev. B28, 2705 (1983).
D. J. Srolovitz, M. P. Anderson, G. S. Grest and P. S. Sahni, Scr. Metal.17, 241 (1983).
O. Hunderi and N. Ryum, J. Mat. Sci.15, 1104 (1980).
I. M. Lifshitz and V. V. Slozov, Soviet Phys JETP.35, 331 (1959).
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Kalainathan, S., Dhanasekaran, R. & Ramasamy, P. Grain growth mechanism in boron doped polycrystalline silicon. J. Electron. Mater. 19, 1135–1139 (1990). https://doi.org/10.1007/BF02651994
Received:
Issue Date:
DOI: https://doi.org/10.1007/BF02651994