Hydrogen passivation of defects and impurities in GaAs and InP E. M. OmeljanovskyA. V. PakhomovA. Y. Polyakov OriginalPaper Pages: 659 - 670
Parameters affecting thermal fatigue behavior of 60Sn-40Pb solder joints D. FrearD. GrivasJ. W. Morris OriginalPaper Pages: 671 - 680
Photoluminescence characterization of ultrahigh purity silicon Kimberly L. SchumacherRaymond L. Whitney OriginalPaper Pages: 681 - 687
The role of interfacial segregation and microstructure in interdiffusion between aluminum and silicon David C. EngNicole HerbotsRobert J. Culbertson OriginalPaper Pages: 689 - 693
Large-area uniform OMVPE growth for GaAs/AIGaAs quantum-well diode lasers with controlled emission wavelength C. A. WangH. K. ChoiM. K. Connors OriginalPaper Pages: 695 - 701
Infra-red striagraph topography for imaging defects in semiconductor crystals R. L. Barns OriginalPaper Pages: 703 - 710
Selective deposition of diamond films J. L. DavidsonC. EllisR. Ramesham OriginalPaper Pages: 711 - 715
Orientation dependentp-type conversion of Fe:InP in hydride VPE regrown EMBH lasers B. C. JohnsonT. J. BridgesF. G. Storz OriginalPaper Pages: 717 - 720
Silicon preamorphization and shallow junction formation for ULSI circuits C. P. WuJ. T. McGinnL. R. Hewitt OriginalPaper Pages: 721 - 730
In-situ processing using rapid thermal chemical vapor deposition V. MuraliA. T. WuJ. Crowley OriginalPaper Pages: 731 - 736
Positron annihilation spectroscopy: Applications to Si, ZnO, and multilayer semiconductor structures J. P. SchafferA. RohatgiS. K. Pang OriginalPaper Pages: 737 - 744
Electrical and structural effects on ionizing radiation in IGFETS A. Reisman OriginalPaper Pages: 745 - 755
Growth and characterization of superconducting V3Si on Si and Al2O3 by molecular beam epitaxial techniques E. T. CrokeR. J. HauensteinT. C. McGill OriginalPaper Pages: 757 - 761
Application of the divisor method to multiple peak DLTS spectra Peter D. DevriesA. Azim Khan OriginalPaper Pages: 763 - 766
Bias-temperature stability of nitrided oxides and reoxidized nitrided oxides Wei-Tsun ShiauFred L. Terry OriginalPaper Pages: 767 - 773
Doping andp-n junction formation in InAs1-xSbx/lnSb SLS’s by MOCVD R. M. BiefeldS. R. KurtzI. J. Fritz OriginalPaper Pages: 775 - 780
