Abstract
It is well known that bias-temperature stressing of MOS devices produces increased interface state densities and insulator fixed charges, thus limiting the high temperature applications of these devices. Nitrided oxides have previously been reported to offer increased resistance to interface state generation and insulator charge buildup in ionizing radiation and room temperature hot electron stress, but under some nitridation conditions are known to suffer from problems which include a low field bias temperature instability. We will report that reoxidized nitrided oxides can offer increased resistance to both bias-temperature stress-induced interface state generation and insulator charge buildup compared with the original oxides.
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Shiau, WT., Terry, F.L. Bias-temperature stability of nitrided oxides and reoxidized nitrided oxides. J. Electron. Mater. 18, 767–773 (1989). https://doi.org/10.1007/BF02657531
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DOI: https://doi.org/10.1007/BF02657531