Abstract
A very simple method for imaging the shape of the growth interface in InP crystals using infra-red sensitive film has been developed. Images of large samples (several square inches) are obtained which show high resolution (better than 25 microns) and high sensitivity. A variety of other imperfections are revealed. Free carrier concentration changes are displayed with high spatial resolution. The method should be a useful tool in guiding improvements in bulk crystal growth. The use of a CCD camera for imaging imperfections, for example, residual processing damage, was explored and found to be potentially useful for rapid screening of the quality of production wafers of these materials.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
R. L. Barns, “Imperfections in Ruby for Maser Applications,” Proceedings of Tech. Conf. on Metallurgy of Advanced Electronic Materials, Interscience Pubis., NY, 337–349 (1962).
M. R. Brozel, “An Optical Transmission Technique for the Observation of Growth Striations in III-IV Compounds,” in Defect Recognition and Image Processing in III-IV Compounds II, Elsevier, Amsterdam, 225–232 (1987).
K. Sugaii, H. Koizumi and E. Kobuta, J. Electron Mater.12, 701 (1983).
J. P. Farges, C. Schiller and W. J. Bartels, J. Cryst. Growth83, 159 (1987).
“Scientific Imaging with Kodak Films and Plates,” Eastman Kodak Co. (1987).
E. M. Monberg, H. Brown and C. E. Bonner, J. Cryst. Growth94, 109 (1989).
O. K. Kim and W. A. Bonner, J. Electron. Mater.,12, 827 (1983).
O. H. Hua, G. P. Li. X. K. He and Q. Wang, Mater. Lett.3, 93 (1985).
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Barns, R.L. Infra-red striagraph topography for imaging defects in semiconductor crystals. J. Electron. Mater. 18, 703–710 (1989). https://doi.org/10.1007/BF02657522
Received:
Issue Date:
DOI: https://doi.org/10.1007/BF02657522