Abstract
Diethylzinc, dimethylcadmium, hydrogen selenide, silane, dimethyltellurium, and di-ethyltellurium were investigated as dopants for InSb and InAs1-xSbx. Carrier concentrations between 5 x 103 and 5 x 1019 cm-3 have been achieved for bothn- and p-type dopants by using dilute mixtures, 10 to 50 ppm, of dimethylcadmium and dimethyltellurium in hydrogen. The 77 K Hall mobilities of p-type InSb ranged from 7000 to 200 cm2/Vs and of n-type from 55,000 to 1700 cm2/Vs. An InAs0.17Sbo0.83/InSb SLS infrared photodiode has been fabricated with a wavelength response cutoff of 10.2 μm at 77 K. The zero bias, external current responsivity and infrared absorption of this device were measured. The predicted optical transitions using a type II heterojunction band offset closely match the observed absorption. The minority carrier diffusion length, perpendicular to the growth planes, is approximately 0.5 μm
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Biefeld, R.M., Kurtz, S.R. & Fritz, I.J. Doping andp-n junction formation in InAs1-xSbx/lnSb SLS’s by MOCVD. J. Electron. Mater. 18, 775–780 (1989). https://doi.org/10.1007/BF02657532
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DOI: https://doi.org/10.1007/BF02657532