Energy spectrum of charge carriers in TlIn1–x Yb x Te2 solid solutions F. F. AlievU. M. AgaevaM. M. Zarbaliev Electronic Properties of Semiconductors 11 October 2016 Pages: 1273 - 1279
First-principles calculations of the electronic and structural properties of GaSb E.-E. Castaño-GonzálezN. SeñaF. Mesa Electronic Properties of Semiconductors 11 October 2016 Pages: 1280 - 1286
Study of the effect of doping on the temperature stability of the optical properties of germanium single crystals O. I. PodkopaevA. F. ShimanskiyN. O. Golubovskaya Electronic Properties of Semiconductors 11 October 2016 Pages: 1287 - 1290
Some challenging points in the identification of defects in floating-zone n-type silicon irradiated with 8 and 15 MeV protons V. V. EmtsevN. V. AbrosimovD. S. Poloskin Electronic Properties of Semiconductors 11 October 2016 Pages: 1291 - 1298
Room-temperature operation of quantum cascade lasers at a wavelength of 5.8 μm A. V. BabichevA. BousseksouA. Yu. Egorov Electronic Properties of Semiconductors 11 October 2016 Pages: 1299 - 1303
UV and IR emission intensity in ZnO films, nanorods, and bulk single crystals doped with Er and additionally introduced impurities M. M. MezdroginaA. Ya. VinogradovM. V. Chukichev Spectroscopy, Interaction with Radiation 11 October 2016 Pages: 1304 - 1311
Self-synchronization of the modulation of energy-levels population with electrons in GaAs induced by picosecond pulses of probe radiation and intrinsic stimulated emission N. N. AgeevaI. L. BronevoiA. N. Krivonosov Spectroscopy, Interaction with Radiation 11 October 2016 Pages: 1312 - 1321
Reflectance of a PbSb2Te4 crystal in a wide spectral range S. A. NemovYu. V. UlashkevichI. I. Khlamov Spectroscopy, Interaction with Radiation 11 October 2016 Pages: 1322 - 1326
The C 1s core level spectroscopy of carbon atoms at the surface SiC/Si(111)-4° layer and Cs/SiC/Si(111)-4° interface G. V. BenemanskayaP. A. DementevB. V. Senkovskiy Surfaces, Interfaces, and Thin Films 11 October 2016 Pages: 1327 - 1332
Dielectric properties of DNA oligonucleotides on the surface of silicon nanostructures N. T. BagraevA. L. ChernevM. V. Dubina Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 11 October 2016 Pages: 1333 - 1337
GaSb laser-power (λ = 1550 nm) converters: Fabrication method and characteristics V. P. KhvostikovS. V. SorokinaV. M. Andreev Physics of Semiconductor Devices 11 October 2016 Pages: 1338 - 1343
Effect of the chemical composition of Cu–In–Ga–Se layers on the photoconductivity and conversion efficiency of CdS/CIGSe solar cells G. F. NovikovWei-Tao TsaiYun Sun Physics of Semiconductor Devices 11 October 2016 Pages: 1344 - 1351
Mechanism of microplasma turn-off upon the avalanche breakdown of silicon p–n structures A. M. Musaev Physics of Semiconductor Devices 11 October 2016 Pages: 1352 - 1355
On the main photoelectric characteristics of three-junction InGaP/InGaAs/Ge solar cells in a broad temperature range (–197°C ≤ T ≤ +85°C) V. M. AndreevD. A. MalevskiyA. V. Chekalin Physics of Semiconductor Devices 11 October 2016 Pages: 1356 - 1361
Theory of the power characteristics of quantum-well lasers with asymmetric barrier layers: Inclusion of asymmetry in electron- and hole-state filling L. V. AsryanF. I. ZubovA. E. Zhukov Physics of Semiconductor Devices 11 October 2016 Pages: 1362 - 1368
Efficiency droop in GaN LEDs at high injection levels: Role of hydrogen N. I. BochkarevaI. A. SheremetYu. G. Shreter Physics of Semiconductor Devices 11 October 2016 Pages: 1369 - 1376
Fabrication of a terahertz quantum-cascade laser with a double metal waveguide based on multilayer GaAs/AlGaAs heterostructures R. A. KhabibullinN. V. ShchavrukZh. I. Alferov Physics of Semiconductor Devices 11 October 2016 Pages: 1377 - 1382
effect of the parameters of AlN/GaN/AlGaN and AlN/GaN/InAlN heterostructures with a two-dimensional electron gas on their electrical properties and the characteristics of transistors on their basis A. F. TsatsulnikovV. W. LundinV. M. Ustinov Physics of Semiconductor Devices 11 October 2016 Pages: 1383 - 1389
Polarization characteristics of 850-nm vertical-cavity surface-emitting lasers with intracavity contacts and a rhomboidal oxide current aperture M. A. BobrovN. A. MaleevV. M. Ustinov Physics of Semiconductor Devices 11 October 2016 Pages: 1390 - 1395
Study of the pulse characteristics of semiconductor lasers with a broadened waveguide at low temperatures (110–120 K) D. A. VeselovI. S. ShashkinI. S. Tarasov Physics of Semiconductor Devices 11 October 2016 Pages: 1396 - 1402
Enhancement of the spectral sensitivity of photodiodes for the mid-IR spectral range E. V. KunitsynaE. A. GrebenshchikovaYu. P. Yakovlev Physics of Semiconductor Devices 11 October 2016 Pages: 1403 - 1407
Laser characteristics of an injection microdisk with quantum dots and its free-space outcoupling efficiency F. I. ZubovN. V. KryzhanovskayaA. E. Zhukov Physics of Semiconductor Devices 11 October 2016 Pages: 1408 - 1411
On the gain properties of “thin” elastically strained InGaAs/InGaAlAs quantum wells emitting in the near-infrared spectral region near 1550 nm I. I. NovikovL. Ya. KarachinskyA. Yu. Egorov Physics of Semiconductor Devices 11 October 2016 Pages: 1412 - 1415
Investigation of the fabrication processes of AlGaN/AlN/GaN НЕМТs with in situ Si3N4 passivation K. N. TomoshA. Yu. PavlovP. P. Maltsev Fabrication, Treatment, and Testing of Materials and Structures 11 October 2016 Pages: 1416 - 1420
