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Effect of the chemical composition of Cu–In–Ga–Se layers on the photoconductivity and conversion efficiency of CdS/CIGSe solar cells

  • Physics of Semiconductor Devices
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Abstract

The effect of the [Ga]/[In+Ga] ratio of gallium and indium on the microwave photoconductivity of Cu–In–Ga–Se (CIGSe) films and on the efficiency of solar cells fabricated in accordance with the same technology is investigated. According to the observations of a field-emission scanning electron microscopy (FESEM), the grain size decreases with increasing Ga content. With increasing gallium content in the samples, the photogenerated-electron lifetime and the activation energy of the microwave photoconductivity also decrease. The changes in the activation energy of the through conduction in darkness are less than 20%. Analysis of the obtained data shows that the known effect of the gallium gradient on the efficiency should be associated with modification of the internal structure of grains instead of with their boundaries.

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Authors and Affiliations

  1. Institute of Problems of Chemical Physics, Russian Academy of Sciences, Chernogolovka, 142432, Russia

    G. F. Novikov, K. V. Bocharov, E. V. Rabenok & Wu-Shiung Feng

  2. Department of Electronic Engineering, Chang Gung University, Taoyuan, Taiwan

    Wei-Tao Tsai, Ming-Jer Jeng & Liann-Be Chang

  3. Institute of Photoelectronic Thin Film Device and Technology, Nankai University, Tianjin, PR China

    Jian-Ping Ao & Yun Sun

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  1. G. F. Novikov
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  2. Wei-Tao Tsai
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  3. K. V. Bocharov
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  4. E. V. Rabenok
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Correspondence to G. F. Novikov.

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Original Russian Text © G.F. Novikov, Wei-Tao Tsai, K.V. Bocharov, E.V. Rabenok, Ming-Jer Jeng, Liann-Be Chang, Wu-Shiung Feng, Jian-Ping Ao, Yun Sun, 2016, published in Fizika i Tekhnika Poluprovodnikov, 2016, Vol. 50, No. 10, pp. 1363–1369.

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Novikov, G.F., Tsai, WT., Bocharov, K.V. et al. Effect of the chemical composition of Cu–In–Ga–Se layers on the photoconductivity and conversion efficiency of CdS/CIGSe solar cells. Semiconductors 50, 1344–1351 (2016). https://doi.org/10.1134/S1063782616100195

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  • DOI: https://doi.org/10.1134/S1063782616100195

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