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On the gain properties of “thin” elastically strained InGaAs/InGaAlAs quantum wells emitting in the near-infrared spectral region near 1550 nm

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Abstract

The results of experimental studies of the gain properties of “thin” (3.2 nm thick) elastically strained InGaAs/InGaAlAs quantum wells emitting in the near-infrared spectral region near 1550 nm are presented. The results of studying the threshold and gain characteristics of stripe laser diodes with active regions based on “thin” quantum wells with a lattice–substrate mismatch of +1.0% show that the quantum wells under study exhibit a high modal gain of 11 cm–1 and a low transparency current density of 46 A/cm2 per quantum well.

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Authors and Affiliations

  1. Connector Optics LLC, ul. Domostroitel’naya 16B, St. Petersburg, 194292, Russia

    I. I. Novikov, L. Ya. Karachinsky, A. S. Kurochkin, A. G. Gladyshev, A. V. Babichev & A. Yu. Egorov

  2. National Research University of Information Technologies, Mechanics and Optics, pr. Kronverkskii 49, St. Petersburg, 197101, Russia

    I. I. Novikov, L. Ya. Karachinsky, E. S. Kolodeznyi, V. E. Bougrov, A. S. Kurochkin, A. G. Gladyshev, A. V. Babichev, I. M. Gadzhiev, M. S. Buyalo, A. V. Savelyev, I. A. Nyapshaev & A. Yu. Egorov

  3. Ioffe Physical–Technical Institute, Russian Academy of Sciences, ul. Politekhnicheskaya 26, St. Petersburg, 194021, Russia

    I. M. Gadzhiev, M. S. Buyalo, Yu. M. Zadiranov, A. A. Usikova & Yu. M. Shernyakov

Authors
  1. I. I. Novikov
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  2. L. Ya. Karachinsky
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  3. E. S. Kolodeznyi
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  4. V. E. Bougrov
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  5. A. S. Kurochkin
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  6. A. G. Gladyshev
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  7. A. V. Babichev
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  8. I. M. Gadzhiev
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  9. M. S. Buyalo
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  10. Yu. M. Zadiranov
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  11. A. A. Usikova
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  12. Yu. M. Shernyakov
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  13. A. V. Savelyev
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  14. I. A. Nyapshaev
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  15. A. Yu. Egorov
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Corresponding author

Correspondence to A. A. Usikova.

Additional information

Original Russian Text © I.I. Novikov, L.Ya. Karachinsky, E.S. Kolodeznyi, V.E. Bougrov, A.S. Kurochkin, A.G. Gladyshev, A.V. Babichev, I.M. Gadzhiev, M.S. Buyalo, Yu.M. Zadiranov, A.A. Usikova, Yu.M. Shernyakov, A.V. Savelyev, I.A. Nyapshaev, A.Yu. Egorov, 2016, published in Fizika i Tekhnika Poluprovodnikov, 2016, Vol. 50, No. 10, pp. 1429–1433.

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Novikov, I.I., Karachinsky, L.Y., Kolodeznyi, E.S. et al. On the gain properties of “thin” elastically strained InGaAs/InGaAlAs quantum wells emitting in the near-infrared spectral region near 1550 nm. Semiconductors 50, 1412–1415 (2016). https://doi.org/10.1134/S1063782616100201

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  • DOI: https://doi.org/10.1134/S1063782616100201

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