1. Structural properties of ZnO:Al films produced by the sol–gel technique

   • E. P. Zaretskaya
   • V. F. Gremenok
   • R. L. Juskenas

   Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) 13 October 2015 Pages: 1253 - 1258

2. New mechanism of structuring associated with the quasi-merohedral twinning by an example of Ca_1–x La _x F_{2 + x} ordered solid solutions

   • S. K. Maksimov
   • K. S. Maksimov
   • M. V. Lovygin

   Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) 13 October 2015 Pages: 1259 - 1269

3. Crossover between transport mechanisms in the region of the transition from sublinearity to superlinearity of the AC-conductivity frequency dependence for disordered semiconductors

   • M. A. Ormont

   Electronic Properties of Semiconductors 13 October 2015 Pages: 1270 - 1275

4. Magnetic and electrical properties of Fe_0.9Ag_0.1In_2.3S_4.4 single crystals

   • I. V. Bodnar
   • S. V. Trukhanov
   • T. H. Barugu

   Electronic Properties of Semiconductors 13 October 2015 Pages: 1276 - 1280

5. Investigation of current instabilities in Mn₄Si₇–Si:Mn–Mn₄Si₇ and Mn₄Si₇–Si:Mn–M heterojunctions

   • T. S. Kamilov
   • L. L. Aksenova
   • I. V. Ernst

   Electronic Properties of Semiconductors 13 October 2015 Pages: 1281 - 1284

6. Increase in the diffusion length of minority carriers in Al _x Ga_1–x N alloys ( _x = 0–0.1) fabricated by ammonia molecular beam epitaxy

   • T. V. Malin
   • A. M. Gilinsky
   • K. S. Zhuravlev

   Electronic Properties of Semiconductors 13 October 2015 Pages: 1285 - 1289

7. Influence of the ionization-energy losses of high-energy bismuth ions on the development of helium blisters in silicon

   • V. F. Reutov
   • S. N. Dmitriev
   • A. G. Zaluzhnyi

   Electronic Properties of Semiconductors 13 October 2015 Pages: 1290 - 1293

8. Detection of impurity diamagnetic susceptibility and its behavior in n-Ge:As in the region of the insulator–metal phase transition

   • A. I. Veinger
   • A. G. Zabrodskii
   • P. V. Semenikhin

   Electronic Properties of Semiconductors 13 October 2015 Pages: 1294 - 1301

9. Anisotropic mixed hole scattering mechanism in Sb₂Te_3–x Se _x crystals (0 ≤ x ≤ 0.1) according to the data of the Nernst–Ettingshausen and seebeck effects

   • S. A. Nemov
   • N. M. Blagikh
   • L. D. Ivanova

   Electronic Properties of Semiconductors 13 October 2015 Pages: 1302 - 1306

10. On the charge neutrality level and the electronic properties of interphase boundaries in the layered ε-GaSe semiconductor

    • V. N. Brudnyi
    • S. Yu. Sarkisov
    • A. V. Kosobutsky

    Surfaces, Interfaces, and Thin Films 13 October 2015 Pages: 1307 - 1310

11. Binding energy of excitons formed from spatially separated electrons and holes in insulating quantum dots

    • S. I. Pokutnyi
    • Yu. N. Kulchin
    • V. P. Dzyuba

    Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 13 October 2015 Pages: 1311 - 1315

12. Density dependence of electron mobility in the accumulation mode for fully depleted SOI films

    • O. V. Naumova
    • E. G. Zaitseva
    • V. P. Popov

    Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 13 October 2015 Pages: 1316 - 1322

13. Density of surface states in colloidal CdSe nanoplatelets

    • A. V. Katsaba
    • V. V. Fedyanin
    • R. B. Vasiliev

    Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 13 October 2015 Pages: 1323 - 1326

14. Structure and optical transmission spectra of ZnS–SiO₂ nanocomposite films deposited at low temperatures

    • P. N. Krylov
    • R. M. Zakirova
    • I. V. Fedotova

    Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 13 October 2015 Pages: 1327 - 1331

15. Anomalously long lifetime of holes in silicon with nanoclusters of manganese atoms

    • M. K. Bakhadyrkhanov
    • S. B. Isamov
    • Kh. U. Kamalov

    Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 13 October 2015 Pages: 1332 - 1334

16. Emission spectra of a laser based on an In(Ga)As/GaAs quantum-dot superlattice

    • M. M. Sobolev
    • M. S. Buyalo
    • E. L. Portnoi

    Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 13 October 2015 Pages: 1335 - 1340

17. Radiation hardness of n-GaN schottky diodes

    • A. A. Lebedev
    • S. V. Belov
    • V. V. Kozlovski

    Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 13 October 2015 Pages: 1341 - 1343

18. Polaron mass of charge carriers in semiconductor quantum wells

    • A. Yu. Maslov
    • O. V. Proshina

    Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 13 October 2015 Pages: 1344 - 1347

19. Current–voltage characteristics of disordered organic layers under space-charge-limited conditions based on the transport level concept

    • V. R. Nikitenko
    • A. Yu. Saunina

    Amorphous, Vitreous, and Organic Semiconductors 13 October 2015 Pages: 1348 - 1351

20. X-ray fluorescence analysis of Ge_1–x Se _x , As_1–x Se _x , and Ge_1–x–y As _y Se _x glasses using electronic excitation

    • E. I. Terukov
    • P. P. Seregin
    • K. U. Bobokhuzhaev

    Amorphous, Vitreous, and Organic Semiconductors 13 October 2015 Pages: 1352 - 1356

21. Zinc-oxide-based nanostructured materials for heterostructure solar cells

    • A. A. Bobkov
    • A. I. Maximov
    • E. I. Terukov

    Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors 13 October 2015 Pages: 1357 - 1360

22. Comparative investigation of InGaP/GaAs/GaAsBi and InGaP/GaAs heterojunction bipolar transistors

    • Yi-Chen Wu
    • Jung-Hui Tsai
    • Fu-Min Wang

    Physics of Semiconductor Devices 13 October 2015 Pages: 1361 - 1364

23. Photodetectors on the basis of Ge/Si(001) heterostructures grown by the hot-wire CVD technique

    • V. G. Shengurov
    • V. Yu. Chalkov
    • D. O. Filatov

    Physics of Semiconductor Devices 13 October 2015 Pages: 1365 - 1368

24. Whispering gallery modes in a spherical microcavity with a photoluminescent shell

    • S. A. Grudinkin
    • A. A. Dontsov
    • V. G. Golubev

    Physics of Semiconductor Devices 13 October 2015 Pages: 1369 - 1374

25. Study of silicon production processes and development of solar-cell fabrication technologies

    • B. N. Mukashev
    • A. A. Betekbaev
    • D. M. Skakov

    Fabrication, Treatment, and Testing of Materials and Structures 13 October 2015 Pages: 1375 - 1382

26. Properties of AlN films deposited by reactive ion-plasma sputtering

    • N. A. Bert
    • A. D. Bondarev
    • I. S. Tarasov

    Fabrication, Treatment, and Testing of Materials and Structures 13 October 2015 Pages: 1383 - 1387

27. Metamorphic distributed Bragg reflectors for the 1440–1600 nm spectral range: Epitaxy, formation, and regrowth of mesa structures

    • A. Yu. Egorov
    • L. Ya. Karachinsky
    • V. N. Nevedomskiy

    Fabrication, Treatment, and Testing of Materials and Structures 13 October 2015 Pages: 1388 - 1392