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Semiconductors

, Volume 49, Issue 10, pp 1253–1258 | Cite as

Structural properties of ZnO:Al films produced by the sol–gel technique

  • E. P. ZaretskayaEmail author
  • V. F. Gremenok
  • A. V. Semchenko
  • V. V. Sidsky
  • R. L. Juskenas
Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion)

Abstract

ZnO:Al films are produced by sol–gel deposition at temperatures of 350–550°C, using different types of reagents. Atomic-force microscopy, X-ray diffraction analysis, Raman spectroscopy, and optical transmittance measurements are used to study the dependence of the structural, morphological, and optical properties of the ZnO:Al coatings on the conditions of deposition. The optical conditions for the production of ZnO:Al layers with preferred orientation in the [001] direction and distinguished by small surface roughness are established. The layers produced in the study possess optical transmittance at a level of up to 95% in a wide spectral range and can be used in optoelectronic devices.

Keywords

Raman Spectrum Thin Solid Film Zinc Acetate Aluminum Dope Zinc Oxide Aluminum Dope Zinc Oxide Film 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Pleiades Publishing, Ltd. 2015

Authors and Affiliations

  • E. P. Zaretskaya
    • 1
    Email author
  • V. F. Gremenok
    • 1
  • A. V. Semchenko
    • 2
  • V. V. Sidsky
    • 2
  • R. L. Juskenas
    • 3
  1. 1.Scientific and Practical Materials Research CenterNational Academy of Sciences of BelarusMinskBelarus
  2. 2.Gomel State UniversityGomelBelarus
  3. 3.State Research Institute Center for Physical Sciences and TechnologyVilniusLithuania

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