Analysis of the phase diagrams of the CdS-CdSe-CdTe system V. A. Kuznetsov Atomic Structure and Nonelectronic Propertties of Semiconductors 29 September 2010 Pages: 1117 - 1120
Subterahertz self-oscillations of depletion of electron populations in the conduction band of GaAs in the presence of pumping and intrinsic stimulated radiation N. N. AgeevaI. L. BronevoiA. N. Krivonosov Electrical and Optical Properties of Semiconductors 29 September 2010 Pages: 1121 - 1128
Features of reflection spectra of single crystals of Bi2Te3-Sb2Te3 solid solutions in the region of plasma effects N. P. StepanovA. A. Kalashnikov Electrical and Optical Properties of Semiconductors 29 September 2010 Pages: 1129 - 1133
Differential method of analysis of luminescence spectra of semiconductors A. M. Emel’yanov Electrical and Optical Properties of Semiconductors 29 September 2010 Pages: 1134 - 1139
Dislocation electrical conductivity of plastically deformed natural diamonds S. N. SamsonenkoN. D. SamsonenkoV. I. Timchenko Electrical and Optical Properties of Semiconductors 29 September 2010 Pages: 1140 - 1144
Negative magnetoresistance in silicon with manganese-atom complexes [Mn]4 M. K. BakhadirkhanovK. S. AyupovS. B. Isamov Electrical and Optical Properties of Semiconductors 29 September 2010 Pages: 1145 - 1148
The variance law and scattering mechanism of charge carriers in Zn-doped p-In0.5Ga0.5Sb C. A. ZeynalovF. F. AlievB. A. Tairov Electrical and Optical Properties of Semiconductors 29 September 2010 Pages: 1149 - 1152
Influence of defects formed by fast reactor neutrons on exciton luminescence spectra of cadmium sulfide single crystals G. E. DavidyukN. S. BogdanyukV. Kažukauskas Electrical and Optical Properties of Semiconductors 29 September 2010 Pages: 1153 - 1157
Charge neutrality level and electronic properties of GaSe under pressure V. N. BrudnyiA. V. KosobutskyS. Yu. Sarkisov Electrical and Optical Properties of Semiconductors 29 September 2010 Pages: 1158 - 1166
The nature of edge luminescence of CdTe:Mg diffusion layers V. P. MakhniyV. V. KosolovskiyA. M. Slyotov Electrical and Optical Properties of Semiconductors 29 September 2010 Pages: 1167 - 1169
Indirect interband transitions in graphite with a wide quasigap V. V. SobolevE. A. AntonovV. Val. Sobolev Electrical and Optical Properties of Semiconductors 29 September 2010 Pages: 1170 - 1175
Films of degenerate intrinsic oxides of InSe and In4Se3 semiconductor crystals V. M. KaterynchukM. Z. Kovalyuk Semiconductor Structures, Interfaces, and Surfaces 29 September 2010 Pages: 1176 - 1179
Electrical characteristics of the CdTe-n-CdHgTe structure fabricated in a single molecular-beam epitaxy process Yu. P. MashukovN. N. MikhailovV. V. Vasilyev Semiconductor Structures, Interfaces, and Surfaces 29 September 2010 Pages: 1180 - 1184
Study of the p-Ge-n-GaAs heterojunction under hydrostatic pressure M. M. GadjialievZ. Sh. PirmagomedovT. N. Efendieva Semiconductor Structures, Interfaces, and Surfaces 29 September 2010 Pages: 1185 - 1186
Study of the layer-substrate interface in nc-Si-SiO2-p-Si structures with silicon quantum dots by the method of temperature dependences of photovoltage E. F. VengerS. I. KirillovaJ. Jedrzejewski Semiconductor Structures, Interfaces, and Surfaces 29 September 2010 Pages: 1187 - 1191
Electrical properties of thin-film structures formed by pulsed laser deposition of Au, Ag, Cu, Pd, Pt, W, Zr metals on n-6H-SiC crystal R. I. RomanovV. V. ZuevV. V. Grigoriev Semiconductor Structures, Interfaces, and Surfaces 29 September 2010 Pages: 1192 - 1198
X-ray diffraction analysis and scanning micro-Raman spectroscopy of structural irregularities and strains deep inside the multilayered InGaN/GaN heterostructure V. V. StrelchukV. P. KladkoA. E. Belyaev Low-Dimensional Systems 29 September 2010 Pages: 1199 - 1210
Effect of an AC electric field on the conductance of single-wall semiconductor-type carbon nanotubes M. B. BelonenkoS. Yu. GlazovN. E. Mescheryakova Low-Dimensional Systems 29 September 2010 Pages: 1211 - 1216
The dependence of the lasing threshold in ZnO nanorods on their length A. N. GruzintsevG. A. EmelchenkoG. Visimberga Low-Dimensional Systems 29 September 2010 Pages: 1217 - 1221
An (AlGaAs/GaAs/AlGaAs)60 resonant Bragg structure based on the second quantum-confinement level of heavy-hole excitons in quantum wells V. V. ChaldyshevD. E. SholohovA. P. Vasil’ev Low-Dimensional Systems 29 September 2010 Pages: 1222 - 1226
Effect of oxygen plasma on the properties of tantalum oxide films V. M. KalyginaA. N. ZarubinT. M. Yaskevich Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors; Semiconductor Composites 29 September 2010 Pages: 1227 - 1234
Mode structure of laser emission from ZnO Nanorods with one metal mirror A. N. GruzintsevG. A. EmelchenkoG. Visimberga Physics of Semiconductor Devices 29 September 2010 Pages: 1235 - 1240
EBIC study of nonradiative recombination in silicon LEDs with near-band-edge luminescence E. B. YakimovN. A. Sobolev Physics of Semiconductor Devices 29 September 2010 Pages: 1241 - 1243
Gas-fired thermophotovoltaic generator based on metallic emitters and GaSb cells A. S. VlasovV. P. KhvostikovG. F. Tereschenko Physics of Semiconductor Devices 29 September 2010 Pages: 1244 - 1248
Conductance simulation in an a-Si:H thin-film transistor with Schottky barriers A. V. VishnyakovM. D. Efremov Physics of Semiconductor Devices 29 September 2010 Pages: 1249 - 1252