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The variance law and scattering mechanism of charge carriers in Zn-doped p-In0.5Ga0.5Sb

  • Electrical and Optical Properties of Semiconductors
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Abstract

Temperature dependences of the electrical conductivity, Hall coefficient, and thermoelectric power of Zn-doped alloys of the equimolar composition In0.5Ga0.5Sb are studied. The concentration and temperature dependences of the effective mass of holes are determined. It is shown that, for all doped samples at T < 200 K, the charge carriers are scattered by impurity ions and, at T > 200 K, scattering by lattice vibrations also introduces a substantial contribution.

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Authors and Affiliations

  1. Institute of Physics, National Academy of Sciences of Azerbaijan, pr. Dzhavida 33, Baku, Az-1143, Azerbaijan

    C. A. Zeynalov, F. F. Aliev, S. Z. Damirova & B. A. Tairov

Authors
  1. C. A. Zeynalov
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  2. F. F. Aliev
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  3. S. Z. Damirova
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  4. B. A. Tairov
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Corresponding author

Correspondence to F. F. Aliev.

Additional information

Original Russian Text © C.A. Zeynalov, F.F. Aliev, S.Z. Damirova, B.A. Tairov, 2010, published in Fizika i Tekhnika Poluprovodnikov, 2010, Vol. 44, No. 9, pp. 1185–1188.

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Zeynalov, C.A., Aliev, F.F., Damirova, S.Z. et al. The variance law and scattering mechanism of charge carriers in Zn-doped p-In0.5Ga0.5Sb. Semiconductors 44, 1149–1152 (2010). https://doi.org/10.1134/S1063782610090071

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  • DOI: https://doi.org/10.1134/S1063782610090071

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