Abstract
Diode structures with ideality factors of 1.28–2.14 and potential barriers from 0.58 to 0.62 eV on the semiconductor side were formed by pulsed laser deposition of Au, Ag, Cu, Pd, Pt, W, and Zr metal films on n-6H-SiC crystal without epitaxial layer preparation. A high density of surface acceptor and donor states was formed at the metal-semiconductor interface during deposition of the laser-induced atomic flux, which violated the correlation between the potential barrier height and metal work function. The barrier heights determined from characteristic currents and capacitance measurements were in quite good agreement. For the used low-resistance semiconductor and contact elements, the sizes of majority carrier (electron) depletion regions were determined as 26–60 nm.
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Original Russian Text © R.I. Romanov, V.V. Zuev, V.Yu. Fominskii, M.V. Demin, V.V. Grigoriev, 2010, published in Fizika i Tekhnika Poluprovodnikov, 2010, Vol. 44, No. 9, pp. 1229–1235.
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Romanov, R.I., Zuev, V.V., Fominskii, V.Y. et al. Electrical properties of thin-film structures formed by pulsed laser deposition of Au, Ag, Cu, Pd, Pt, W, Zr metals on n-6H-SiC crystal. Semiconductors 44, 1192–1198 (2010). https://doi.org/10.1134/S1063782610090162
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DOI: https://doi.org/10.1134/S1063782610090162