Self-diffusion parameters in carbon-subgroup crystals M. N. Magomedov Atomic Structure and Nonelectronic Propertties of Semiconductors 26 March 2010 Pages: 271 - 284
Precipitation of boron in silicon on high-dose implantation K. V. FeklistovL. I. FedinaA. G. Cherkov Atomic Structure and Nonelectronic Propertties of Semiconductors 26 March 2010 Pages: 285 - 288
Photoconductivity and luminescence in GaSe crystals at high levels of optical excitation A. G. Kyazym-zadeV. M. SalmanovR. Z. Ibaeva Electrical and Optical Properties of Semiconductors 26 March 2010 Pages: 289 - 292
Features of an intermetallic n-ZrNiSn semiconductor heavily doped with atoms of rare-earth metals V. A. RomakaD. FruchartR. V. Krayjvskii Electrical and Optical Properties of Semiconductors 26 March 2010 Pages: 293 - 302
Effect of annealing on the microwave magnetoresistance of thin Ge0.96Mn0.04 films A. I. DmitrievR. B. MorgunovO. L. Kazakova Electrical and Optical Properties of Semiconductors 26 March 2010 Pages: 303 - 308
Reduction in absorption in quartz/Si, quartz/Si/SiO2, and SiC/Si/SiO2 structures on laser treatment V. N. LissotschenkoR. V. KonakovaA. M. Svetlichnyi Semiconductor Structures, Interfaces, and Surfaces 26 March 2010 Pages: 309 - 312
Study of the current-voltage characteristic of the n-CdS/p-CdTe heterostructure depending on temperature Sh. N. UsmonovSh. A. MirsagatovA. Yu. Leyderman Semiconductor Structures, Interfaces, and Surfaces 26 March 2010 Pages: 313 - 317
Photosensitivity of n-CdS/p-CdTe heterojunctions obtained by chemical surface deposition of CdS G. A. Il’chukV. V. KusnezhR. Yu. Petrus’ Semiconductor Structures, Interfaces, and Surfaces 26 March 2010 Pages: 318 - 320
Emission sensitization and mechanisms of electron-excitation migration in structures based on III-nitrides doped with rare-earth elements (Eu, Er, Sm) M. M. MezdroginaE. Yu. DanilovskyR. V. Kuzmin Semiconductor Structures, Interfaces, and Surfaces 26 March 2010 Pages: 321 - 328
Effect of irradiation on the luminescence properties of low-dimensional SiGe/Si(001) heterostructures A. V. NovikovA. N. YablonskiyZ. F. Krasilnik Low-Dimensional Systems 26 March 2010 Pages: 329 - 334
Observation of localized centers with anomalous behavior in light-emitting heterostructures with multiple InGaN/GaN quantum wells O. V. KucherovaV. I. ZubkovD. V. Davydov Low-Dimensional Systems 26 March 2010 Pages: 335 - 340
The form of the profile of heterointerfaces in (311)Ga GaAs/AlAs structures D. V. GulyaevK. S. Zhuravlev Low-Dimensional Systems 26 March 2010 Pages: 341 - 349
Effect of thermal oxidation on charge carrier transport in nanostructured silicon E. A. AgafonovaM. N. MartyshovP. K. Kashkarov Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors; Semiconductor Composites 26 March 2010 Pages: 350 - 353
Polydisalicylidene azomethyne/Si(GaAs) heterojunctions: Development and properties Yu. A. NikolaevV. Yu. Rud’V. V. Shamanin Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors; Semiconductor Composites 26 March 2010 Pages: 354 - 358
Reliability estimate for semiconductor laser module ILPN-134 O. V. ZhuravlevaA. V. IvanovR. V. Chernov Physics of Semiconductor Devices 26 March 2010 Pages: 359 - 365
Effect of gold on the properties of nitrogen dioxide sensors based on thin WO3 films O. V. AnisimovV. I. GamanE. V. Chernikov Physics of Semiconductor Devices 26 March 2010 Pages: 366 - 372
A study of thermal processes in high-power InGaN/GaN flip-chip LEDs by IR thermal imaging microscopy A. L. ZakgeimG. L. KuryshevA. E. Chernyakov Physics of Semiconductor Devices 26 March 2010 Pages: 373 - 379
Influence of radiation defects on electrical losses in silicon diodes irradiated with electrons N. A. PoklonskiN. I. GorbachukA. Wieck Physics of Semiconductor Devices 26 March 2010 Pages: 380 - 384
Si:Er/Si diode structures for observing room-temperature electroluminescence at a wavelength of 1.54 μm V. P. KuznetsovM. V. KuznetsovZ. F. Krasil’nik Physics of Semiconductor Devices 26 March 2010 Pages: 385 - 391
A technique for characterizing surface recombination in silicon wafers based on thermal-emission measurements V. V. Bogatyrenko Fabrication, Treatment, and Testing of Materials and Structures 26 March 2010 Pages: 392 - 395
Sublimation molecular beam epitaxy of silicon-based structures V. P. KuznetsovZ. F. Krasil’nik Fabrication, Treatment, and Testing of Materials and Structures 26 March 2010 Pages: 396 - 400
Secondary cluster ions Ge 2 − and Ge 3 − for improving depth resolution of SIMS depth profiling of GeSi/Si heterostructures M. N. DrozdovYu. N. DrozdovD. V. Yurasov Fabrication, Treatment, and Testing of Materials and Structures 26 March 2010 Pages: 401 - 404
GaAsSb/GaAs strained structures with quantum wells for lasers with emission wavelength near 1.3 μm Yu. G. SadofyevN. SamalA. N. Yablonsky Fabrication, Treatment, and Testing of Materials and Structures 26 March 2010 Pages: 405 - 412