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Polydisalicylidene azomethyne/Si(GaAs) heterojunctions: Development and properties

  • Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors; Semiconductor Composites
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Abstract

An athermal nonvacuum technology was suggested and implemented, and nonclassically polyconjugated polydisalicylidene azomethyne/Si(GaAs) heterojunctions were fabricated for the first time. It was found that the highest photosensitivity of these heterojunctions is attained upon exposure to light in the spectral range of 1–3.5 eV of the side of thin polymer films. It was concluded that new heterojunctions can be used as broadband photoconverters of optical radiation.

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Authors and Affiliations

  1. Ioffe Physico-Technical Institute, Russian Academy of Sciences, ul. Polytekhnicheskaya 26, St. Petersburg, 194021, Russia

    Yu. A. Nikolaev, Yu. V. Rud’ & E. I. Terukov

  2. St. Petersburg State Polytechnical University, ul. Polytekhnicheskaya 29, St. Petersburg, 195251, Russia

    V. Yu. Rud’

  3. Institute of Macromolecular Compounds, Russian Academy of Sciences, Bolshoi pr. 31, St. Petersburg, 199004, Russia

    N. M. Heller, A. G. Ivanov & V. V. Shamanin

Authors
  1. Yu. A. Nikolaev
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  2. V. Yu. Rud’
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  3. Yu. V. Rud’
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  4. E. I. Terukov
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  5. N. M. Heller
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  6. A. G. Ivanov
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  7. V. V. Shamanin
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Corresponding author

Correspondence to Yu. V. Rud’.

Additional information

Original Russian Text © Yu.A. Nikolaev, V.Yu. Rud’, Yu.V. Rud’, E.I. Terukov, N.M. Heller, A.G. Ivanov, V.V. Shamanin, 2010, published in Fizika i Tekhnika Poluprovodnikov, 2010, Vol. 44, No. 3, pp. 372–376.

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Nikolaev, Y.A., Rud’, V.Y., Rud’, Y.V. et al. Polydisalicylidene azomethyne/Si(GaAs) heterojunctions: Development and properties. Semiconductors 44, 354–358 (2010). https://doi.org/10.1134/S1063782610030140

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  • DOI: https://doi.org/10.1134/S1063782610030140

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