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Study of the current-voltage characteristic of the n-CdS/p-CdTe heterostructure depending on temperature

  • Semiconductor Structures, Interfaces, and Surfaces
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Abstract

Current-voltage characteristics of the n-CdS/p-CdTe heterostructure are studied at different temperatures. It is established that the forward portion of the current-voltage characteristic of these structures at low voltages (as high as 0.5 V) is described by the exponential dependence, while at high voltages (as high as 2.6 V), there is a portion of sublinear growth of the current with voltage. Experimental results are interpreted based on the theory of the effect of injection depletion. It is shown that the product of mobility of majority carriers by the concentration of deep centers increases as the temperature is increased.

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Authors and Affiliations

  1. Starodubtsev Physicotechnical Institute, Academy of Sciences of Uzbekistan, ul. G. Mavlyanova 2, Tashkent, 100084, Uzbekistan

    Sh. N. Usmonov, Sh. A. Mirsagatov & A. Yu. Leyderman

Authors
  1. Sh. N. Usmonov
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  2. Sh. A. Mirsagatov
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  3. A. Yu. Leyderman
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Correspondence to Sh. N. Usmonov.

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Original Russian Text © Sh.N. Usmonov, Sh.A. Mirsagatov, A.Yu. Leyderman, 2010, published in Fizika i Tekhnika Poluprovodnikov, 2010, Vol. 44, No. 3, pp. 330–334.

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Usmonov, S.N., Mirsagatov, S.A. & Leyderman, A.Y. Study of the current-voltage characteristic of the n-CdS/p-CdTe heterostructure depending on temperature. Semiconductors 44, 313–317 (2010). https://doi.org/10.1134/S1063782610030073

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  • DOI: https://doi.org/10.1134/S1063782610030073

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