Multifrequency kinks in multifrequency external fields M. E. Polyakov Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 1 - 5
Electrical activity of dislocations and point defects of deformation origin in CdxHg1−x Te crystals S. G. Gasan-zadeS. V. StaryiG. A. Shepel’skii Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 6 - 14
Determination of deformation potential constants for n-and p-Si from the concentration anharmonicity A. A. SkvortsovO. V. LitvinenkoA. M. Orlov Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 15 - 19
Influence of electronic (charge) state of E traps on their introduction rate in irradiated n-GaAs V. N. BrudnyiV. V. Peshev Electronic and Optical Properties of Semiconductors Pages: 20 - 27
Study of photocapacitance in diodes fabricated from silicon doped with vanadium Kh. T. IgamberdievA. T. MamadalimovSh. A. Shoyusupov Semiconductor Structures, Interfaces, and Surfaces Pages: 28 - 30
Investigation of magnetosensitivity of transistor structures with diffusive transport of injected charge carriers M. A. GlaubermanV. V. YegorovN. A. Kanishcheva Semiconductor Structures, Interfaces, and Surfaces Pages: 31 - 37
Size effect in two-photon absorption of recombination radiation in graded-gap AlxGa1−x As solid solutions V. F. KovalenkoS. V. Shutov Semiconductor Structures, Interfaces, and Surfaces Pages: 38 - 43
Mathematical simulation of the kinetics of high-temperature silicon oxidation and the structure of the boundary layer in the Si-SiO2 system G. Ya. KrasnikovN. A. ZaitsevI. V. Matyushkin Semiconductor Structures, Interfaces, and Surfaces Pages: 44 - 49
Effect of thermal annealing of radiation defects on the noise characteristics of silicon p-n structures with a thin multiplication region A. K. BaranouskiiP. V. KuchinskiiE. D. Savenok Semiconductor Structures, Interfaces, and Surfaces Pages: 50 - 52
Photoelectric properties of heterojunctions between silicon and polyhomoconjugated organometallic compounds N. V. BlinovaE. L. KrasnopeevaV. V. Shamanin Semiconductor Structures, Interfaces, and Surfaces Pages: 53 - 56
Optical transparency of macroporous silicon with through pores E. V. AstrovaL. I. KorovinV. B. Shuman Semiconductor Structures, Interfaces, and Surfaces Pages: 57 - 64
Silicon carbide transistor structures as detectors of weakly ionizing radiation N. B. StrokanA. M. IvanovR. Yakimova Semiconductor Structures, Interfaces, and Surfaces Pages: 65 - 69
Lateral electronic transport in short-period InAs/GaAs superlattices at the threshold of quantum dot formation V. A. Kul’bachinskiiR. A. LuninA. de Visser Low-Dimensional Systems Pages: 70 - 76
Investigation of electronic transitions in coupled-quantum-well structures with a built-in electric field by photoreflectance spectroscopy G. B. GalievV. É. KaminskiiV. A. Kul’bachinskii Low-Dimensional Systems Pages: 77 - 81
Influence of charged defects on detection of electron spin resonance in vitreous chalcogenide semiconductors L. P. Ginzburg Amorphous, Vitreous, and Porous Semiconductors Pages: 82 - 91
Electrical properties of Si:H/p-Si structures fabricated by hydrogen implantation O. V. NaumovaI. V. AntonovaV. F. Stas’ Amorphous, Vitreous, and Porous Semiconductors Pages: 92 - 96
Structural-phase transformations in SiOx films in the course of vacuum heat treatment I. P. LisovskyyI. Z. IndutnyyP. E. Shepelyavyi Amorphous, Vitreous, and Porous Semiconductors Pages: 97 - 102
The influence of hydrogen plasma on the electroreflectance spectrum and the spectrum of electron states of porous silicon E. F. VengerR. Yu. HolineyA. V. Vasin Amorphous, Vitreous, and Porous Semiconductors Pages: 103 - 107
Optical properties of polydimethylphenyleneoxide free-standing films containing fullerene Yu. F. BiryulinE. Yu. MelenevskayaV. N. Zgonnik Amorphous, Vitreous, and Porous Semiconductors Pages: 108 - 111
Electroluminescence of injection lasers based on vertically coupled quantum dots near the lasing threshold N. Yu. GordeevS. V. ZaitsevP. S. Kop’ev Physics of Semiconductor Devices Pages: 112 - 114
Tunneling recombination in silicon avalanche diodes S. V. BulyarskiiV. K. IonychevV. V. Kuz’min Physics of Semiconductor Devices Pages: 115 - 118
