Abstract
A relationship between the concentrations of induced spins and native U − centers is established on the basis of taking electronic processes accompanying band-to-band excitation into account.
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Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 37, No. 1, 2003, pp. 83–92.
Original Russian Text Copyright © 2003 by Ginzburg.
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Ginzburg, L.P. Influence of charged defects on detection of electron spin resonance in vitreous chalcogenide semiconductors. Semiconductors 37, 82–91 (2003). https://doi.org/10.1134/1.1538544
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DOI: https://doi.org/10.1134/1.1538544