Abstract
Hydrogenated silicon (Si:H) layers and Si:H/p-Si heterostructures were produced by multiple-energy (3–24 keV) high-dose (5×1016–3×1017 cm−2) hydrogen implantation into p-Si wafers. After implantation, current transport across the structures is controlled by the Poole-Frenkel mechanism, with the energy of the dominating emission center equal to E c −0.89 eV. The maximum photosensitivity is observed for structures implanted with 3.2×1017 cm−2 of hydrogen and annealed in the temperature range of 250–300°C. The band gap of the Si:H layer E g ≈2.4 eV, and the dielectric constant ɛ≈3.2. The density of states near the Fermi level is (1–2)×1017 cm−3 eV−1.
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Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 37, No. 1, 2003, pp. 93–97.
Original Russian Text Copyright © 2003 by Naumova, Antonova, Popov, Stas’.
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Naumova, O.V., Antonova, I.V., Popov, V.P. et al. Electrical properties of Si:H/p-Si structures fabricated by hydrogen implantation. Semiconductors 37, 92–96 (2003). https://doi.org/10.1134/1.1538545
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DOI: https://doi.org/10.1134/1.1538545