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Electroluminescence of injection lasers based on vertically coupled quantum dots near the lasing threshold

  • Physics of Semiconductor Devices
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Abstract

Electroluminescence spectroscopy has been used in a wide range of temperatures (77–300 K) and driving current densities to study a laser heterostructure based on vertically coupled self-assembled InGaAs quantum dots (QD). It has been found that lasing occurs via the QD ground state in the entire temperature range. The temperature-independent position of the emission peak corresponding to the second excited state in QDs is explained.

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Authors and Affiliations

  1. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia

    N. Yu. Gordeev, L. Ya. Karachinsky, V. I. Kopchatov, I. I. Novikov, V. M. Ustinov & P. S. Kop’ev

  2. Nova Crystals, Inc., 174 Component Dr., San José, CA, 95131, USA

    S. V. Zaitsev

Authors
  1. N. Yu. Gordeev
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  2. S. V. Zaitsev
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  3. L. Ya. Karachinsky
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  4. V. I. Kopchatov
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  5. I. I. Novikov
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  6. V. M. Ustinov
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  7. P. S. Kop’ev
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__________

Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 37, No. 1, 2003, pp. 114–116.

Original Russian Text Copyright © 2003 by Gordeev, Za\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \)sev, Karachinsky, Kopchatov, Novikov, Ustinov, Kop’ev.

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Gordeev, N.Y., Zaitsev, S.V., Karachinsky, L.Y. et al. Electroluminescence of injection lasers based on vertically coupled quantum dots near the lasing threshold. Semiconductors 37, 112–114 (2003). https://doi.org/10.1134/1.1538549

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  • DOI: https://doi.org/10.1134/1.1538549

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