Electronic structure of cubic silicon carbide with substitutional 3d impurities at Si and C sites N. I. MedvedevaE. I. Yur’evaA. L. Ivanovskii Electronic and Optical Properties of Semiconductors Pages: 1243 - 1246
Optical and thermal properties of CuAlxIn1−x Te2 solid solutions I. V. Bodnar’ Electronic and Optical Properties of Semiconductors Pages: 1247 - 1251
Defect-related luminescence of GaN:Zn films thermally treated in a radio-frequency ammonia plasma G. A. SukachV. V. KidalovE. P. Potapenko Electronic and Optical Properties of Semiconductors Pages: 1252 - 1256
Effective electron mass in a MnxHg1−x Te system I. M. Nesmelova Electronic and Optical Properties of Semiconductors Pages: 1257 - 1258
Effect of grain boundaries on the properties of cadmium telluride grown under nonequilibrium conditions V. V. UshakovYu. V. Klevkov Electronic and Optical Properties of Semiconductors Pages: 1259 - 1263
Ultraviolet luminescence of thin GaN films grown by radical-beam gettering epitaxy on porous GaAs(111) substrates V. V. KidalovG. A. SukachE. P. Potapenko Electronic and Optical Properties of Semiconductors Pages: 1264 - 1265
Hopping polarization photoconductivity of silicon with the involvement of impurity pairs of groups III and V Ya. E. PokrovskiiN. A. Khval’kovskii Electronic and Optical Properties of Semiconductors Pages: 1266 - 1274
Defect formation in PbTe under the action of a laser shock wave V. S. YakovynaD. M. ZayachukN. N. Berchenko Electronic and Optical Properties of Semiconductors Pages: 1275 - 1277
Galvanomagnetic effects in atomic-disordered HgSe1−x Sx compounds A. E. Kar’kinV. V. ShchennikovB. N. Goshchitskii Electronic and Optical Properties of Semiconductors Pages: 1278 - 1282
Photosensitive structure on CdGa2S4 single crystals V. Yu. Rud’Yu. V. Rud’N. Fernelius Semiconductor Structures, Interfaces, and Surfaces Pages: 1283 - 1290
Photoelectric phenomena in ZnO:Al-p-Si heterostructures S. E. NikitinYu. A. NikolaevE. I. Terukov Semiconductor Structures, Interfaces, and Surfaces Pages: 1291 - 1295
The thermoelectric power of a semiconductor p-n heterojunction M. M. GadzhialievZ. Sh. Pirmagomedov Semiconductor Structures, Interfaces, and Surfaces Pages: 1296 - 1298
On the influence of a Si single-crystal real surface on the low-frequency internal friction and the behavior of an effective shear modulus A. V. Oleinich-LysyukN. P. BeshleyI. M. Fodchuk Semiconductor Structures, Interfaces, and Surfaces Pages: 1299 - 1302
Charge fluctuations at the bonding interface in the silicon-on-insulator structures I. V. AntonovaV. A. StuchinskiiV. P. Popov Semiconductor Structures, Interfaces, and Surfaces Pages: 1303 - 1307
Photosensitive structures based on In2S3 crystals I. V. Bodnar’V. A. PolubokYu. V. Rud’ Semiconductor Structures, Interfaces, and Surfaces Pages: 1308 - 1310
Kinetics of the initial stage in chalcogenide passivation of III–V semiconductors V. F. AntyushinA. V. BudanovD. A. Palishkin Semiconductor Structures, Interfaces, and Surfaces Pages: 1311 - 1314
Pulsed-laser modification of germanium nanoclusters in silicon V. A. VolodinE. I. GatskevichA. I. Yakimov Low-Dimensional Systems Pages: 1315 - 1320
Photoluminescence from cadmium sulfide nanoclusters formed in the matrix of a Langmuir-Blodgett film E. A. BagaevK. S. ZhuravlevM. Voelskow Low-Dimensional Systems Pages: 1321 - 1325
Optical properties of MBE-grown ultrathin GaAsN insertions in GaAs matrix N. V. KryzhanovskayaA. G. GladyshevV. M. Ustinov Low-Dimensional Systems Pages: 1326 - 1330
Spontaneous formation of the periodic composition-modulated nanostructure in CdxHg1−x Te films P. A. BakhtinV. S. VaravinM. V. Yakushev Low-Dimensional Systems Pages: 1331 - 1335
Excitonic recombination near the mobility edge in CdSe/ZnSe nanostructures M. Ya. ValakhM. P. LisitsaP. S. Kop’ev Low-Dimensional Systems Pages: 1336 - 1341
Extremal dependence of the concentration of paramagnetic centers related to dangling bonds in si on ion-irradiation dose as evidence of nanostructuring D. I. TetelbaumA. A. EzhevskiiA. N. Mikhaylov Amorphous, Vitreous, and Porous Semiconductors Pages: 1342 - 1344
Ge/Si photodiodes with embedded arrays of Ge quantum dots forthe near infrared (1.3–1.5 µm) region A. I. YakimovA. V. DvurechenskiiS. A. Tiis Physics of Semiconductor Devices Pages: 1345 - 1349
Thermoelements with side heat exchange A. A. AshcheulovV. G. OkhremE. A. Okhrem Physics of Semiconductor Devices Pages: 1350 - 1355
1.7–1.8 µm Diode lasers based on quantum-well InGaAsP/InP heterostructures A. V. LyutetskiiN. A. PikhtinI. S. Tarasov Physics of Semiconductor Devices Pages: 1356 - 1362