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Photosensitive structures based on In2S3 crystals

  • Semiconductor Structures, Interfaces, and Surfaces
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Abstract

Crystals of the compound In2S3 were grown by planar crystallization of the melt. The composition, structure, and electrical characteristics of the crystals obtained were determined. Photosensitive structures based on the grown In2S3 crystals were fabricated for the first time; spectral dependences of photoconversion quantum efficiency for H2O/In2S3 cells were measured. The features of the band-to-band absorption are discussed; energies of the direct and indirect optical transitions for In2S3 crystals are estimated. It is stated that In2S3 crystals can be used in wide-range (1.5–3.5 eV) photoconverters of nonpolarized radiation (in particular, in solar cells).

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Authors and Affiliations

  1. Belarussian State University of Informatics and Radiolectronics, ul. Brovki 17, Minsk, 220072, Belarus

    I. V. Bodnar’ & V. A. Polubok

  2. St. Petersburg State Polytechnical University, Politekhnicheskaya ul. 29, St. Petersburg, 195021, Russia

    V. Yu. Rud’

  3. Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russia

    Yu. V. Rud’

Authors
  1. I. V. Bodnar’
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  2. V. A. Polubok
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  3. V. Yu. Rud’
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  4. Yu. V. Rud’
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Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 37, No. 11, 2003, pp. 1346–1348.

Original Russian Text Copyright © 2003 by Bodnar’, Polubok, V. Rud’, Yu. Rud’.

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Bodnar’, I.V., Polubok, V.A., Rud’, V.Y. et al. Photosensitive structures based on In2S3 crystals. Semiconductors 37, 1308–1310 (2003). https://doi.org/10.1134/1.1626214

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  • DOI: https://doi.org/10.1134/1.1626214

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