Abstract
The low-temperature photoluminescence and Raman scattering in CdSe/ZnSe nanostructures with individual CdSe inserts of 1.5 and 3.0 monolayers in nominal thickness were studied. The energy position of the photoluminescene band is governed by interdiffusion of Cd and Zn into the insert regions, whereas the shape of this band is controlled by strong interaction of localized excitons with optical phonons in the Zn1−x CdxSe solid-solution insert. Multiphonon processes of excitonic relaxation with involvement of acoustic phonons at the Brillouin zone edges are also important. The results obtained are interpreted in the context of a model for the effective excitonic mobility edge.
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Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 37, No. 11, 2003, pp. 1374–1379.
Original Russian Text Copyright © 2003 by Valakh, Lisitsa, Strelchuk, Vuychik, Ivanov, Toropov, Shubina, Kop’ev.
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Valakh, M.Y., Lisitsa, M.P., Strelchuk, V.V. et al. Excitonic recombination near the mobility edge in CdSe/ZnSe nanostructures. Semiconductors 37, 1336–1341 (2003). https://doi.org/10.1134/1.1626220
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DOI: https://doi.org/10.1134/1.1626220