Thermodynamic stability of bulk and epitaxial Ge1−x Snx semiconductor alloys V. G. DeibukYu. G. Korolyuk Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 1073 - 1076
The effect of the concentration of the majority charge carriers and irradiation intensity on the efficiency of radiation-defect production in n-Si crystals T. A. PagavaZ. V. Basheleishvili Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 1077 - 1078
Dependence of the annealing kinetics of A centers and divacancies on temperature, particle energy, and irradiation dose for n-Si crystals T. A. Pagava Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 1079 - 1082
Chalcogen dimers in silicon A. A. Taskin Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 1083 - 1090
Chemical bonding and elastic constants of certain ternary III–V solid solutions V. G. DeibukYa. I. Viklyuk Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 1091 - 1096
The nucleation of coherent semiconductor islands during the Stranski-Krastanov growth induced by elastic strains S. A. KukushkinA. V. OsipovP. Hess Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 1097 - 1105
Investigation of vacancy-type complexes in GaN and AlN using positron annihilation N. Yu. ArutyunovA. V. MikhailinE. E. Haller Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 1106 - 1110
The influence of shallow impurities on the temperature dependence of microhardness and the photomechanical effect in semiconductors A. B. GerasimovG. D. Chiradze Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 1111 - 1113
Neutron-irradiation-induced effects caused by divacancy clusters with a tetravacancy core in float-zone silicon P. F. ErmolovD. E. KarmanovE. K. Shabalina Electronic and Optical Properties of Semiconductors Pages: 1114 - 1122
Electronic properties of liquid Tl2Te, Tl2Se, Ag2Te, Cu2Te, and Cu2Se alloys V. M. SklyarchukYu. O. Plevachuk Electronic and Optical Properties of Semiconductors Pages: 1123 - 1127
Dependence of GaN photoluminescence on the excitation intensity V. N. BessolovV. V. EvstropovM. V. Mesh Electronic and Optical Properties of Semiconductors Pages: 1128 - 1131
Photosensitivity of structures based on I-IIIn-VIm ternary compounds containing ordered vacancies I. V. Bodnar’V. Yu. Rud’M. V. Yakushev Semiconductor Structures, Interfaces, and Surfaces Pages: 1132 - 1135
Effect of the state of the silicon surface on hydrogen sensitivity of Pd/n-Si barrier structures V. M. KalyginaL. S. KhludkovaT. A. Davydova Semiconductor Structures, Interfaces, and Surfaces Pages: 1136 - 1137
Electrical properties of narrow-gap HgMnTe Schottky diodes L. A. KosyachenkoA. V. MarkovYe. F. Sklyarchuk Semiconductor Structures, Interfaces, and Surfaces Pages: 1138 - 1145
Anisotropy of magnetooptical absorption of quantum dot-impurity center complexes V. D. KrevchikA. B. GruninR. V. Zaitsev Low-Dimensional Systems Pages: 1146 - 1153
Dependence of the optical gap of Si quantum dots on the dot size V. A. Burdov Low-Dimensional Systems Pages: 1154 - 1158
Dependence of scattering of quasi-two-dimensional electrons by acoustic phonons on the parameters of a GaAs/AlxGa1−x As superlattice S. I. Borisenko Low-Dimensional Systems Pages: 1159 - 1162
Temperature dependence of conductance of electrostatically disordered quasi-2D semiconductor systems near an insulator-metal percolation transition A. B. DavydovB. A. AronzonA. S. Vedeneev Low-Dimensional Systems Pages: 1163 - 1168
Photoluminescence and recombination luminescence in amorphous molecular semiconductors doped with organic dyes N. A. DavidenkoS. L. StudzinskiiA. J. Al-Kahdymi Amorphous, Vitreous, and Porous Semiconductors Pages: 1169 - 1179
Crystallization of amorphous hydrogenated silicon films deposited under various conditions O. A. GolikovaE. V. BogdanovaU. S. Babakhodzhaev Amorphous, Vitreous, and Porous Semiconductors Pages: 1180 - 1183
Electroluminescence from porous silicon in the cathodic reduction of persulfate ions: Degree of reversibility of the tuning effect A. A. SarenS. N. KuznetsovV. A. Gurtov Amorphous, Vitreous, and Porous Semiconductors Pages: 1184 - 1187
Space charge limited current in porous silicon and anatase (TiO2) É. A. LebedevT. Dittrich Amorphous, Vitreous, and Porous Semiconductors Pages: 1188 - 1191
Influence of the design and material parameters on the current-voltage characteristics of two-island single-electron chains I. I. AbramovS. A. IgnatenkoE. G. Novik Physics of Semiconductor Devices Pages: 1192 - 1197