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Photosensitivity of structures based on I-IIIn-VIm ternary compounds containing ordered vacancies

  • Semiconductor Structures, Interfaces, and Surfaces
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Abstract

Homogeneous crystals of CuIn3Se5, CuGa3Se5, and CuGa5Se8 ternary compounds were grown, and their physical and chemical properties were investigated. Photosensitive structures were fabricated for the first time on the basis of these compounds, and the spectral dependence of the relative quantum photoconversion efficiency was measured. The bandgap of these compounds was also estimated, and it was shown that direct interband transitions are typical in them. It was found that the content and chemical nature of atoms forming an elementary cell in a I-IIIn-VIm ternary compound control the relevant band gap.

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Authors and Affiliations

  1. Belarussian State University of Information Science and Radio Engineering, ul. Brovki 17, Minsk, 220072, Belarus

    I. V. Bodnar’

  2. St. Petersburg State Technical University, Politekhnicheskaya ul. 29, St. Petersburg, 195251, Russia

    V. Yu. Rud’

  3. Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russia

    Yu. V. Rud’

  4. University of Strathclyde, G40NG, Glasgow, UK

    M. V. Yakushev

Authors
  1. I. V. Bodnar’
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  2. V. Yu. Rud’
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  3. Yu. V. Rud’
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  4. M. V. Yakushev
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__________

Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 36, No. 10, 2002, pp. 1211–1214.

Original Russian Text Copyright © 2002 by Bodnar’, V. Rud’, Yu. Rud’, Yakushev.

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Bodnar’, I.V., Rud’, V.Y., Rud’, Y.V. et al. Photosensitivity of structures based on I-IIIn-VIm ternary compounds containing ordered vacancies. Semiconductors 36, 1132–1135 (2002). https://doi.org/10.1134/1.1513857

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  • DOI: https://doi.org/10.1134/1.1513857

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