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Electrical properties of narrow-gap HgMnTe Schottky diodes

  • Semiconductor Structures, Interfaces, and Surfaces
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Abstract

The electrical properties of Al/Hg1−x MnxTe (x=0.08–0.1) Schottky barriers have been studied. Specific features related to a narrow band gap and to a strong difference between the effective masses of carriers have been revealed. The principal parameters defining the characteristics of a diode structure, as well as the tunneling and above-barrier (diffusion) carrier transport, are determined. The obtained experimental and theoretical data demonstrate the high detectivity of the diodes under study.

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Authors and Affiliations

  1. Chernivtsi National University, Chernivtsi, 58012, Ukraine

    L. A. Kosyachenko, A. V. Markov, S. É. Ostapov, I. M. Rarenko, V. M. Sklyarchuk & Ye. F. Sklyarchuk

Authors
  1. L. A. Kosyachenko
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  2. A. V. Markov
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  3. S. É. Ostapov
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  4. I. M. Rarenko
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  5. V. M. Sklyarchuk
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  6. Ye. F. Sklyarchuk
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__________

Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 36, No. 10, 2002, pp. 1217–1224.

Original Russian Text Copyright © 2002 by Kosyachenko, Markov, Ostapov, Rarenko, V. Sklyarchuk, Ye. Sklyarchuk.

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Kosyachenko, L.A., Markov, A.V., Ostapov, S.É. et al. Electrical properties of narrow-gap HgMnTe Schottky diodes. Semiconductors 36, 1138–1145 (2002). https://doi.org/10.1134/1.1513859

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  • DOI: https://doi.org/10.1134/1.1513859

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