Indium layers in low-temperature gallium arsenide: Structure and how it changes under annealing in the temperature range 500–700 °C N. A. BertA. A. SuvorovaR. Werner Atomic Structure and Non-Electronic Properties of Semiconductors Pages: 683 - 688
Features of the electrical compensation of bismuth impurities in PbSe S. A. NemovT. A. GavrikovaV. I. Proshin Atomic Structure and Non-Electronic Properties of Semiconductors Pages: 689 - 691
Effect of isovalent indium doping on excess arsenic in gallium arsenide grown by molecular-beam epitaxy at low temperatures V. V. ChaldyshevA. E. KunitsynB. R. Semyagin Atomic Structure and Non-Electronic Properties of Semiconductors Pages: 692 - 695
Stabilization of the physical properties of CdxHg1−x Se solid solutions doped with iron O. S. RomanyukS. Yu. ParanchichV. N. Makogonenko Electronic and Optical Properties of Semiconductors Pages: 696 - 699
Phase states and magnetic structure of superconducting lead inclusions in a narrow-gap PbTe semiconducting host S. D. DarchukL. A. KorovinaM. Sawicki Electronic and Optical Properties of Semiconductors Pages: 700 - 703
Properties of manganese-doped gallium arsenide layers grown by liquid-phase epitaxy from a bismuth melt K. S. ZhuravlevT. S. ShamirzaevN. A. Yakusheva Electronic and Optical Properties of Semiconductors Pages: 704 - 710
Calculation of the energy levels of shallow acceptors in uniaxially strained germanium M. A. OdnoblyudovV. M. Chistyakov Electronic and Optical Properties of Semiconductors Pages: 711 - 713
Effect of metal impurities on the drift mobility of charge carriers in glassy chalcogenide semiconductors L. P. KazakovaÉ. A. Lebedev Electronic and Optical Properties of Semiconductors Pages: 714 - 715
Donorlike behavior of rare-earth impurities in PbTe G. T. AlekseevaM. V. VedernikovYu. I. Ravich Electronic and Optical Properties of Semiconductors Pages: 716 - 719
Contribution of light holes to the Hall effect for the complex valence band in germanium and its dependence on doping level M. V. AlekseenkoA. G. ZabrodskiiL. M. Shterengas Electronic and Optical Properties of Semiconductors Pages: 720 - 728
Computer-simulation investigation of nonlinear transport dynamics in a compensated semiconductor during low-temperature electric breakdown K. M. JandieriV. S. Kachlishvili Electronic and Optical Properties of Semiconductors Pages: 729 - 733
Preparation and properties of GeS2 single crystals A. V. GolubkovG. B. DubrovskiiA. I. Shelykh Electronic and Optical Properties of Semiconductors Pages: 734 - 735
Photovoltaic effect in In/I-III-VI2-thin-film surface-barrier structures V. Yu. Rud’Yu. V. Rud’S. L. Sergeev-Nekrasov Electronic and Optical Properties of Semiconductors Pages: 736 - 738
Allowing for current spreading in semiconductors during measurements of the contact resistivity of ohmic contacts A. N. AndreevM. G. RastegaevaS. A. Reshanov Semiconductor Structures, Interfaces and Surfaces Pages: 739 - 744
Donor-acceptor recombination in short-period silicon-doped GaAs/AlAs superlattices I. I. ReshinaR. Planel’ Semiconductor Structures, Interfaces and Surfaces Pages: 745 - 748
Theoretical study of the threshold characteristics of InGaN multiquantum well lasers G. G. ZegryaN. A. Gun’ko Low-Dimensional Systems Pages: 749 - 753
Modulation of optical absorption of GaAs/AlGaAs quantum wells in a transverse electric field L. E. Vorob’evE. A. ZibikI. I. Saidashev Low-Dimensional Systems Pages: 754 - 756
Light absorption and refraction due to intersubband transitions of hot electrons in coupled GaAs/AlGaAs quantum wells L. E. Vorob’evI. E. TitkovE. Towe Low-Dimensional Systems Pages: 757 - 761
Light absorption in aperiodic PbS/C superlattices in an electric field S. F. MusikhinV. I. Il’inL. V. Sharonova Low-Dimensional Systems Pages: 762 - 764
Growth of InAs quantum dots on vicinal GaAs(001) surfaces misoriented in the [010] direction V. P. EvtikhievV. E. TokranovM. Ichida Low-Dimensional Systems Pages: 765 - 769
Scattering of hot electrons by neutral acceptors in GaAs/AlAs quantum well structures D. N. MirlinV. I. Perel’I. I. Reshina Low-Dimensional Systems Pages: 770 - 778
Defects and short-and medium-range order in the structural network of hydrogenated amorphous silicon O. A. GolikovaV. Kh. Kudoyarova Low-Dimensional Systems Pages: 779 - 781
Effect of deposition and annealing conditions on the optical properties of amorphous silicon A. I. MashinA. V. ErshovD. A. Khokhlov Low-Dimensional Systems Pages: 782 - 784
Temperature dependence of the reverse current in Schottky barrier diodes P. A. PipinisA. K. RimeikaV. A. Lapeika Physics of Semiconductor Devices Pages: 785 - 788
Use of direct wafer bonding of silicon for fabricating solar cell structures with vertical p-n junctions V. B. VoronkovE. G. GukV. B. Shuman Physics of Semiconductor Devices Pages: 789 - 791
Pulsed investigations of diode structures based on silicon-hydrogen films S. V. BelovA. A. Lebedev Physics of Semiconductor Devices Pages: 792 - 794
Investigation of the device characteristics of a low-threshold quantum-dot laser emitting at 1.9 µm A. E. ZhukovA. Yu. EgorovP. S. Kop’ev Physics of Semiconductor Devices Pages: 795 - 797