1. McCurdy’s Effects in the Thermal Conductivity of Elastically Anisotropic Crystals in the Mode of Knudsen Phonon-Gas Flow

   • I. G. Kuleyev
   • I. I. Kuleyev
   • S. M. Bakharev

   NONELECTRONIC PROPERTIES OF SEMICONDUCTORS (ATOMIC STRUCTURE, DIFFUSION) 24 December 2018 Pages: 1643 - 1652

   

2. Effect of a por-Si Buffer Layer on the Structure and Morphology of Epitaxial In_xGa_{1 – x}N/Si(111) Heterostructures

   • P. V. Seredin
   • D. L. Goloshchapov
   • Monika Rinke

   NONELECTRONIC PROPERTIES OF SEMICONDUCTORS (ATOMIC STRUCTURE, DIFFUSION) 24 December 2018 Pages: 1653 - 1661

   

3. Features of the Electron Mobility in the n-InSe Layered Semiconductor

   • A. Sh. Abdinov
   • R. F. Babayeva

   ELECTRONIC PROPERTIES OF SEMICONDUCTORS 24 December 2018 Pages: 1662 - 1668

   

4. Measurement of the Charge-Carrier Mobility in Gallium Arsenide Using a Near-Field Microwave Microscope by the Microwave-Magnetoresistance Method

   • D. A. Usanov
   • A. E. Postelga
   • I. V. Sharov

   ELECTRONIC PROPERTIES OF SEMICONDUCTORS 24 December 2018 Pages: 1669 - 1671

   

5. Conduction-Electron Spin Resonance in HgSe Crystals

   • A. I. Veinger
   • I. V. Kochman
   • L. D. Paranchich

   ELECTRONIC PROPERTIES OF SEMICONDUCTORS 24 December 2018 Pages: 1672 - 1676

   

6. Interaction Rates of Group-III and Group-V Impurities with Intrinsic Point Defects in Irradiated Si and Ge

   • V. V. Emtsev
   • N. V. Abrosimov
   • G. A. Oganesyan

   ELECTRONIC PROPERTIES OF SEMICONDUCTORS 24 December 2018 Pages: 1677 - 1685

   

7. Intracenter Radiative Transitions at Tantalum Impurity Centers in Cadmium Telluride

   • V. V. Ushakov
   • D. F. Aminev
   • V. S. Krivobok

   SPECTROSCOPY, INTERACTION WITH RADIATION 24 December 2018 Pages: 1686 - 1690

   

8. Optical Studies of Heat Transfer in PbTe:Bi(Sb) Thin Films

   • E. V. Ivakin
   • I. G. Kisialiou
   • Y. S. Yavorskyy

   SURFACES, INTERFACES, AND THIN FILMS 24 December 2018 Pages: 1691 - 1695

   

9. Redistribution of Erbium and Oxygen Recoil Atoms and the Structure of Silicon Thin Surface Layers Formed by High-Dose Argon Implantation through Er and SiO₂ Surface Films

   • K. V. Feklistov
   • A. G. Cherkov
   • L. I. Fedina

   SURFACES, INTERFACES, AND THIN FILMS 24 December 2018 Pages: 1696 - 1703

   

10. Diffusion Blurring of GaAs Quantum Wells Grown at Low Temperature

    • V. I. Ushanov
    • V. V. Chaldyshev
    • B. R. Semyagin

    SEMICONDUCTOR STRUCTURES, LOW-DIMENSIONAL SYSTEMS, AND QUANTUM PHENOMENA 24 December 2018 Pages: 1704 - 1707

    

11. Specific Features of the Electron Structure of ZnTPP Aggregated Forms: Data of Optical Measurements and Quantum-Chemical Calculations

    • I. B. Zakharova
    • M. A. Elistratova
    • O. E. Kvyatkovskii

    AMORPHOUS, VITREOUS, AND ORGANIC SEMICONDUCTORS 24 December 2018 Pages: 1708 - 1714

    

12. Ab Initio Study of the ZnSnSb₂ Semiconductor

    • Yu. M. Basalaev

    MICROCRYSTALLINE, NANOCRYSTALLINE, POROUS, AND COMPOSITE SEMICONDUCTORS 24 December 2018 Pages: 1715 - 1720

    

13. Influence of Hydrogen Peroxide on the Photoanodization of n-Si in the Breakdown Mode

    • G. V. Li
    • E. V. Astrova
    • A. I. Lihachev

    MICROCRYSTALLINE, NANOCRYSTALLINE, POROUS, AND COMPOSITE SEMICONDUCTORS 24 December 2018 Pages: 1721 - 1731

    

14. Charge Accumulation in MOS Structures with a Polysilicon Gate under Tunnel Injection

    • O. V. Aleksandrov
    • A. N. Ageev
    • S. I. Zolotarev

    PHYSICS OF SEMICONDUCTOR DEVICES 24 December 2018 Pages: 1732 - 1737

    

15. Impact of the Device Geometric Parameters on Hot-Carrier Degradation in FinFETs

    • S. E. Tyaginov
    • A. A. Makarov
    • T. Grasser

    PHYSICS OF SEMICONDUCTOR DEVICES 24 December 2018 Pages: 1738 - 1742

    

16. nBn-Photodiode Based on InAsSb/AlAsSb Alloys with a Long-Wavelength Cutoff of 5 μm

    • V. B. Kulikov
    • D. V. Maslov
    • V. P. Chaly

    PHYSICS OF SEMICONDUCTOR DEVICES 24 December 2018 Pages: 1743 - 1747

    

17. GaInAsP/InP-Based Laser Power Converters (λ = 1064 nm)

    • V. P. Khvostikov
    • S. V. Sorokina
    • B. V. Pushnyi

    PHYSICS OF SEMICONDUCTOR DEVICES 24 December 2018 Pages: 1748 - 1753

    

18. AlGaAs/GaAs Photovoltaic Converters of Tritium Radioluminescent-Lamp Radiation

    • V. P. Khvostikov
    • V. S. Kalinovskiy
    • V. M. Andreev

    PHYSICS OF SEMICONDUCTOR DEVICES 24 December 2018 Pages: 1754 - 1757

    

19. Radiation-Induced Damage of Silicon-Carbide Diodes by High-Energy Particles

    • A. M. Strel’chuk
    • V. V. Kozlovski
    • A. A. Lebedev

    PHYSICS OF SEMICONDUCTOR DEVICES 24 December 2018 Pages: 1758 - 1762

    

20. Determination of the Region of Thermal Stability of the Size and Phase Composition of Silver-Sulfide Semiconductor Nanoparticles

    • S. I. Sadovnikov
    • E. G. Vovkotrub

    FABRICATION, TREATMENT, AND TESTING OF MATERIALS AND STRUCTURES 24 December 2018 Pages: 1763 - 1769

    

21. Features of the Selective Growth of GaN Nanorods on Patterned c-Sapphire Substrates of Various Configurations

    • A. N. Semenov
    • D. V. Nechaev
    • S. V. Ivanov

    FABRICATION, TREATMENT, AND TESTING OF MATERIALS AND STRUCTURES 24 December 2018 Pages: 1770 - 1774

    

22. Precision Chemical Etching of GaP(NAs) Epitaxial Layers for the Formation of Monolithic Optoelectronic Devices

    • D. A. Kudryashov
    • A. S. Gudovskikh
    • A. I. Baranov

    FABRICATION, TREATMENT, AND TESTING OF MATERIALS AND STRUCTURES 24 December 2018 Pages: 1775 - 1781

    

23. New Manufacturing Approaches to Texture Formation and Thermal Expansion Matching in the Design of Highly Efficient Silicon Solar Photoconverters

    • S. E. Nikitin
    • A. V. Bobyl
    • E. I. Terukov

    FABRICATION, TREATMENT, AND TESTING OF MATERIALS AND STRUCTURES 24 December 2018 Pages: 1782 - 1789