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Measurement of the Charge-Carrier Mobility in Gallium Arsenide Using a Near-Field Microwave Microscope by the Microwave-Magnetoresistance Method

  • ELECTRONIC PROPERTIES OF SEMICONDUCTORS
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Abstract

The possibility of contactless nondestructive local measurements of the microwave carrier mobility in gallium arsenide using a near-field scanning microwave microscope and the effect of microwave magnetoresistance is shown. The need to consider the effect of a shift of the microwave field in processing the result of the measurements is noted.

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Authors and Affiliations

  1. National Research Saratov State University named after N.G. Chernyshevsky, 410012, Saratov, Russia

    D. A. Usanov, A. E. Postelga, A. A. Kalyamin & I. V. Sharov

Authors
  1. D. A. Usanov
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  2. A. E. Postelga
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  3. A. A. Kalyamin
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  4. I. V. Sharov
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Corresponding author

Correspondence to A. A. Kalyamin.

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Translated by A. Kazantsev

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Usanov, D.A., Postelga, A.E., Kalyamin, A.A. et al. Measurement of the Charge-Carrier Mobility in Gallium Arsenide Using a Near-Field Microwave Microscope by the Microwave-Magnetoresistance Method. Semiconductors 52, 1669–1671 (2018). https://doi.org/10.1134/S1063782618130195

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  • DOI: https://doi.org/10.1134/S1063782618130195

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