1. Editorial

   • D.K. Ferry

   Editorial Board Pages: 451 - 451

2. The Role of Quantization Effects on the Operation of 50 nm MOSFETs, 250 nm FIBMOS Devices and Narrow-Width SOI Device Structures

   • D. Vasileska
   • I. Knezevic
   • D.K. Ferry

   OriginalPaper Pages: 453 - 465

3. Study of Electron Transport in SOI MOSFETs Using Monte Carlo Technique with Full-Band Modeling

   • H. Takeda
   • N. Mori
   • C. Hamaguchi

   OriginalPaper Pages: 467 - 474

4. Fullband Particle-Based Simulation of High-Field Transient Transport in III–V Semiconductors

   • S. Wigger
   • M. Saraniti
   • A. Leitenstorfer

   OriginalPaper Pages: 475 - 480

5. A Landauer Approach to Nanoscale MOSFETs

   • M. Lundstrom
   • J.-H. Rhew

   OriginalPaper Pages: 481 - 489

6. Anisotropic Quantum Dots

   • J.B. Wang
   • C. Hines

   OriginalPaper Pages: 491 - 501

7. The Use of Quantum Potentials for Confinement and Tunnelling in Semiconductor Devices

   • A. Asenov
   • J.R. Watling
   • D.K. Ferry

   OriginalPaper Pages: 503 - 513

8. Molecular Conduction: Paradigms and Possibilities

   • A.W. Ghosh
   • S. Datta

   OriginalPaper Pages: 515 - 525