Abstract
Motivated by recent experimental measurements (A. Leitenstorfer et al., 2000. Physical Review B 61(24): 16642–16652), this work presents the transient analysis of photogenerated electron-hole pairs in GaAs and InP pin diodes (S. M. Sze, 1981. Physics of Semiconductor Devices, 2nd edn., John Wiley) using a fullband particle-based simulator (M. Saraniti and S. Goodnick, 2000. IEEE Transactions on Electron Devices 47(10): 1909–1915). The fullband simulation tool is based on a particle-based technique that has been developed to reduce the computational time required for modeling charge transport phenomena in semiconductors. Excellent agreement is found between experiment and simulation of transient acceleration and velocity overshoot in GaAs and InP pin diodes due the femto-second optical excitation of carriers.
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References
Boers P. 1971. Measurements on dipole domains in indium phosphide. Physics Letters 34A: 329–330.
Brennan K. and Hess K. 1984. Theory of high-field transport of holes in GaAs and InP. Physical Review B 29(10): 5581–5590.
Chelikowsky J. and Cohen M. 1976. Nonlocal pseudopotential calculations for the electronic structure of eleven diamond and zincblend semiconductors. Physical Review B 14(2): 556–582.
Fischetti M. 1991. Monte Carlo simulation of transport in technologically significant semiconductors of the diamond and zinc-blende structures—Part I: Homogeneous transport. IEEE Transaction on electron devices 38(3): 634–649.
Fischetti M. and Laux S. 1988. Monte Carlo analysis of electron transport in small semiconductor devices including band-structure and space-charge effects. Physical Review B 38(14): 9721– 9745.
Fischetti M. and Laux S. 1991. Monte Carlo simulation of transport in technologically significant semiconductors of the diamond and zinc-blende strctures—Part II: Submicrometer MOSFET's. IEEE Transaction on Electron Devices 38(3): 650–660.
Fischetti M., Sano N., Laux S., and Natori K. 1996. Full-bandstructure theory of high-field transport and impact ionization of electrons and holes in Ge, Si, and GaAs. In Proceedings of the 1996 Intl. Conf. of Semiconductor Processes and Devices (SISPAD'96), Tokyo, Japan.
Goodnick S. and Lugli P. 1992. Hot-carrier relaxation on quasi-2D systems. In J. Shah (Ed.), Hot Carriers in Semiconductor Nanostructures: Physics and Applications. Academic Press, vol. 8, Ch. III.1, pp. 191–234.
Gruzinskis V., Kersulis S., and Reklaitis A. 1991.Aneffiecient Monte Carlo particle technique for two-dimensional transistor modeling. Semiconductor Science and Technology 6(7): 602–606.
Hockney R. and Eastwood J. 1988. Computer Simulation Using Particles. Bristol: Adam Hilger.
Holway L., Steele S., and Alderstein M. 1979. In: Proceedings of the Seventh Biennial Cornell Electrical Engineering Conference. Ithaca, New York, Cornell University Press, pp. 199–208.
Houston P. and Evans A. 1977. Solid State Electronics 20: 197.
Jackson J. 1975, Classical Electrodynamics, 2nd edn., JohnWiley & Sons, New York.
Jacoboni C. and Lugli P. 1989. The Monte Carlo Method for Semiconductor Device Equations. Springer–Verlag, Wien.
Kometer K., Zandler G., and Vogl P. 1992. Lattice-gas cellularautomaton method for semiclassical transport in semiconductors. Physical Review B 46(3): 1382–1394.
Kunc K. and Nielsen O.H. 1979. Lattice dynamics of Zincblende structure compounds. II. Shell model. Computer Physics Communications 17(4): 413–422.
Leitenstorfer A., Hunsche S., Shah J., Nuss M., and Knox W. 2000. Femtosecond high-field transport in compound semiconductors. Physical Review B 61(24): 16642–16652.
Majerfeld A., Potter K., and Robson P. 1974. Subthreshold velocity-field characteristics for bulk and epixatial InP. Journal of Applied Physics 45: 3681–3682.
Ruch J. and Kino G. 1968. Physical Review 174: 921.
Saraniti M. and Goodnick S. 2000. Hybrid full-band cellular automaton/ Monte Carlo approach for fast simulation of charge transport in semiconductors. IEEE Transactions on Electron Devices 47(10): 1909–1915.
Singh J. 1996. Optoelectronics. McGraw-Hill.
Sze S. 1981. Physics of SemiconductorDevices, 2nd edn., JohnWiley & Sons, New York.
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Wigger, S., Saraniti, M., Goodnick, S. et al. Fullband Particle-Based Simulation of High-Field Transient Transport in III–V Semiconductors. Journal of Computational Electronics 1, 475–480 (2002). https://doi.org/10.1023/A:1022945122145
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DOI: https://doi.org/10.1023/A:1022945122145
- Tera-Hertz radiation
- high-field transport
- Monte Carlo simulation